Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy

Authors H. Ayed1, L. Béchir1, M. Benabdesslem1, N. Benslim1, L. Mahdjoubi1, T. Mohammed-Brahim2, A. Hafdallah3, M.S. Aida3

1 Laboratoire Cristaux et Couches Minces, Faculté des Sciences, Dpt de Physique 1(LESIMS), Université Badji Mokhtar BP.12 Annaba, 23000, Algérie

2 GM-IETR, Université RENNES I, 35042 Rennes Cedex, France

3 Laboratory of Thin Films and Interfaces, Faculty of Science, Department of Physics, University of Constantine 1, 25000 Algeria

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 1
Dates Received 28 July 2015; published online 15 March 2016
Citation H. Ayed, L. Béchir, et al., J. Nano- Electron. Phys. 8 No 1, 01038 (2016)
DOI 10.21272/jnep.8(1).01038
PACS Number(s) 85.30.Hi, 85.30.Kk
Keywords Schottky Diodes (2) , Characterisation (2) , Polycrystalline silicon, Admittance Spectroscopy.
Annotation In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon.

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