Fabrication of p-Bi2O3/n-CdSe Nanoparticles Heterojunction at Different Substrate Temperatures
| Authors | S.A. Najim1 , A.A. Sulaiman1 , K.M. Muhammed2 |
| Affiliations |
1University of Mosul, 41002 Mosul, Iraq 2Sahl Nineveh University, Mosul, Iraq |
| Е-mail | suhaabdullah@uomosul.edu.iq |
| Issue | Volume 18, Year 2026, Number 4 |
| Dates | Received 08 March 2026; revised manuscript received 16 August 2026; published online 21 August 2026 |
| Citation | S.A. Najim, A.A. Sulaiman, K.M. Muhammed, J. Nano- Electron. Phys. 18 No 4, 04033 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(4).04033 |
| PACS Number(s) | 61.46.Df, 78.67.Bf |
| Keywords | Bi2O3 Nanoparticles, CdSe films, Spray (12) , CBD (7) , Heterojunction (6) . |
| Annotation |
Cadmium selenide and bismuth oxide nanoparticles were synthesized by chemical bath deposition technique. CdSe nanoparticles have a negative conductivity (n-type) and Bi2O3 have a positive conductivity (p-type), both are formed p-n heterojunction. Bi2O3 semiconductors were deposited by spray pyrolysis at various substrate temperatures (100, 200 and 300 C) for every 10 sprays on CdSe semiconductors have been prepared on the glass substrates by CBD. The electrical characteristics for Bi2O3/CdSe diode at (100, 200 and 300 C) under dark and illumination have been studied. The substrate temperature was affected by the diode parameters such as the forward and the saturation current. Threshold voltage has been decreased as increasing the substrate temperature at 300 C. Ideality factor of Bi2O3/CdSe nanoparticles was changed with substrate temperatures, it was increased and have maximum value at 300 C. Bandgap energy has minimum value at 100 C and it increases by approximately 0.15 % when compared to the substrate temperature 300 C. Cross-sectional area of Bi2O3/CdSe nanoparticles were investigated by cross-sectional SEM at (100, 200 and 300 C). The surface has become roughness at 300 C and it led greatly stimulated grain growth. |
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List of References |
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