Moire-Angle-Controlled Electronic Transport in MoS2/WS2 Van der Waals Nanodevices with Graphene and Silicene Electrodes
| Authors | D. Sergeyev1,2 , E. Yeskibayev2 |
| Affiliations |
1K. Zhubanov Aktobe Regional University, 030000 Aktobe, Kazakhstan 2T. Begeldinov Aktobe Avation Institute, 030012 Aktobe, Kazakhstan |
| Е-mail | serdau82@gmail.com |
| Issue | Volume 18, Year 2026, Number 4 |
| Dates | Received 25 March 2026; revised manuscript received 18 August 2026; published online 21 August 2026 |
| Citation | D. Sergeyev, E. Yeskibayev, J. Nano- Electron. Phys. 18 No 4, 04008 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(4).04008 |
| PACS Number(s) | 07.05.Tp, 73.63. – b |
| Keywords | MoS2/WS2 Van der Waals nanodevices, TMD Moiré heterostructures, Quantum transport, Contact-induced effects, Nonequilibrium Green’s function. |
| Annotation |
We present a theoretical investigation of electronic transport in van der Waals nanodevices based on MoS2/WS2 heterobilayers with various electrode configurations, including graphene- and silicene-based contacts. The influence of relative twisting between the MoS2 and WS2 layers is systematically analyzed for twist angles 0°, 3°, 6.2°, and 9.7°, corresponding to different regimes of moiré superlattice modulation. Quantum transport calculations are performed within the nonequilibrium Green’s function formalism, enabling a consistent description of contact effects and voltage-dependent transmission characteristics. It is shown that in the absence of twisting, the transport properties are predominantly governed by the electrode material. The introduction of a small twist angle leads to current suppression due to localization of electronic states induced by the moiré effect, whereas larger twist angles result in enhanced conductance. The inverted silicene–MoS2/WS2–graphene configuration exhibits the highest current, which is attributed to interface metallization arising from the siliceneMoS2 contact. These results demonstrate that both the twist angle and the electrode material provide efficient means for tuning the transport properties of MoS2/WS2-based nanoelectronic devices. |
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