Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route
| Authors | M. Benhaliliba1 , C.E. Benouis1 , Y.S. Ocak2 , F. Yakuphanoglu3 |
| Affiliations | 1 Physics Department, Sciences Faculty, USTOMB University, BP1505 Oran, Algeria 2 Department of Science, Faculty of Education, University of Dicle, Diyarbakir, Turkey 3 Firat University, Physics Dpt., Faculty of Sciences and Arts, 23119, Elazig, Turkey |
| Е-mail | bmost_31@yahoo.fr |
| Issue | Volume 4, Year 2012, Number 1 |
| Dates | Received 25 October 2012; revised manuscript received 26 February 2012; published online 14 March 2012 |
| Citation | M. Benhaliliba, C.E. Benouis, Y.S. Ocak, F. Yakuphanoglu, J. Nano-Electron. Phys. 4 No 1, 01011 (2012) |
| DOI | |
| PACS Number(s) | 1.07. – b, 81.15. – z |
| Keywords | Al doped tin oxide, Sprayed films, ITO substrate, Nanostructured films, Transmittance (7) , Hall measurement. |
| Annotation | We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. |
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