Nanostructured NaBiTe2 Thin Films and Their Properties

Authors V.I. Bilozertseva1, D.A. Gaman1, H.M. Khlyap2, A.A. Mamalui1, N.L. Dyakonenko1, L.G. Petrenko1
Affiliations

1 National Technical University "Kharkov Polytechnical Institute", 21 Frunze str., Kharkov, 61002 Ukraine

2 University of Technology, Distel str. 11, D-67657 Kaiserslautern, Germany

Е-mail biloz@mail.ru
Issue Volume 4, Year 2012, Number 1
Dates Received 06 November 2011; published online 14 March 2012
Citation V.I. Bilozertseva, D.A. Gaman, H.M. Khlyap, et al. J. Nano-Electron. Phys. 4 No 1, 01019 (2012)
DOI
PACS Number(s) 8.55.ag, 72.80.Jc
Keywords Thin films (60) , Chalcogenide (14) , NaBiTe2, Structure (102) , Surface relief, Optical transmission, Electric properties (9) , Current mechanisms, Gas sensitivity.
Annotation The paper reports our experimental data on growth, morphology, optical and electrophysical properties of NaBiTe2 thin films grown by thermal evaporation in vacuum. The structural characteristics and electric field-induced properties of semiconductor NaBiTe2 films with Cr contacts are investigated. Room-temperature time dependence of the current flowing through the investigated structures under applied electric field is also discussed. The influence of some aggressive atmospheric impurities on NaBiTe2 films characteristics is described for the first time.

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