The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si

Authors K. Akkilic1, Y.S. Ocak1, T. Kilicoglu2, A. Toprak3

1 Department of Physics, Faculty of Education, Dicle University, Diyarbakir, Turkey

2 Department of Physics, Faculty of Art& Science, Batman University, Batman, Turkey

3 Department of Electronic, Vocational School, Dicle University, Diyarbakir, Turkey

Issue Volume 4, Year 2012, Number 1
Dates Received 17 July 2011; revised manuscript received 26 February 2012; published online 14 March 2012
Citation K. Akkilic, Y.S. Ocak, T. Kilicoglu, A. Toprak, J. Nano-Electron. Phys. 4 No 1, 01012 (2012)
PACS Number(s) 3.61.Ph, 73.30. + y
Keywords ZnO (82) , Schottky contact (5) , DC sputtering, Electrical properties (19) .
Annotation 200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as ideality factor, barrier height and series resistance obtained by current-voltage (I-V) measurements of the structures at room temperature and in dark have been compared with each others.

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