Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode

Authors K.K. Patel1, M. Patel2, K.D. Patel2 , G.K. Solanki2, V.M. Pathak2 , R. Srivastava2

1 Smt. S. M. Panchal Science College, Talod, 383215, Gujarat, India

2 Patel University, Vallabh Vidyanagar, 388120, Gujarat, India

Е-mail karm1962@gmail.com
Issue Volume 3, Year 2011, Number 1, Part 4
Dates Received 04 February 2011, published online 17 October 2011
Citation K.K. Patel, M. Patel, K.D. Patel, G.K. Solanki, V.M. Pathak, R. Srivastava, J. Nano- Electron. Phys. 3 No1, 783 (2011)
PACS Number(s) 73.40Ns. 73.30. + y, 73.40Ei, 73.90 + F
Keywords Schottky diode (10) , I-V characteristics (2) , Barrier height (11) , Ideality factor (10) , Richardson plot (2) .
Ag/p-Sn0.2Se0.8 Schottky barrier diodes have been fabricated and characterized by the current-voltage (I-V) technique as a function of temperature in the range of 303 K to 403 K. The forward bias characteristics have been analyzed on the basis of thermionic emission (TE) theory and the characteristic parameters of Schottky barrier diode such as barrier height, ideality factor and series resistance have been determined. The conventional Richardson plot was drawn and the value of Richardson constant was determined using the intersection of Ln(I0/T2) vs 1000/T. It is found to be around 15 Acm – 2K – 2 which is closer to the reported value for SnSe.

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