Authors | A.P. Shah1, R. Bag2, R. Tyagi2, S.S. Chandvankar1, V.A. Chaudhari3, K.L. Narasimhan1, B.M. Arora3 |
Affiliations | 1 Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, 400005, Mumbai, India 2 Solid State Physics Laboratory, Timarpur, 110054, Delhi, India 3 Indian Institute of Technology Bombay, Powai, 400076, Mumbai, India |
Е-mail | apshah@tifr.res.in |
Issue | Volume 3, Year 2011, Number 1, Part 4 |
Dates | Received 04 February 2011, in final form 11 October 2011, published online 17 October 2011 |
Citation | A.P. Shah, R. Bag, R. Tyagi, S.S. Chandvankar, V.A. Chaudhari, K.L. Narasimhan, B.M. Arora, J. Nano- Electron. Phys. 3 No1, 662 (2011) |
DOI | |
PACS Number(s) | 42.81.Qb, 85.60.Bt |
Keywords | Multijunction solar cells, Quantum efficiency (3) , Ge-GaAs-InGaP, Optical fiber (3) , Bias light. |
Annotation |
We report an optical fiber based spectral response measurement system for multi-junction solar cells. We have also fabricated single junction GaAs cells on GaAS and Ge substrates and measured lighted I-V characteristics. Preliminary quantum efficiency measurements on these devices are also presented. |
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