Strategic Review of Arsenide, Phosphide and Nitride MOSFETs
| Authors | Gourab Dutta, Palash Das , Partha Mukherjee, Dhrubes Biswas |
| Affiliations | Indian Institute of Technology-Kharagpur Kharagpur, West Bengal 721 302 |
| Е-mail | gdutta.iitkgp@gmail.com |
| Issue | Volume 3, Year 2011, Number 1, Part 4 |
| Dates | Received 04 February 2011, , published online 17 October 2011 |
| Citation | Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas, J. Nano- Electron. Phys. 3 No1, 728 (2011) |
| DOI | |
| PACS Number(s) | 85.30.TV |
| Keywords | Review, Arsenide (4) , Phosphide (2) , Nitride (15) , MOSFET (29) , Comparison. |
| Annotation |
Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses. |
|
List of References |
Other articles from this number
1) Photoluminescence and EPR Studies of ZnS Nanoparticles Co-Doped With Mn and Te [0639-0646]2) Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology [0647-0650]
3) Inter-Electrode Separation Induced Amorphous-to-Nanocrystalline Transition of Hydrogenated Silicon Prepared by Capacitively Coupled RF PE-CVD Technique [0651-0661]
4) Optical Fiber Based Spectral Response Measurement System for Multi-Junction Solar Cells [0662-0666]
5) Activation Energy of Polycrystalline Silicon Thin Film Transistor [0667-0670]
6) Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [0671-0675]
7) Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer [0676-0679]
8) A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [0680-0683]
9) Schottky Contact of Gallium on p-Type Silicon [0684-0690]
10) Enhancement in Thermoelectric Power in Lead Telluride Nanocomposite: Role of Oxygen Vis-À-Vis Nanostruct [0691-0697]
11) Structural, Optical, and Dielectric Properties of A[(Mg0.32Co0.02) Nb0.66]O3 Semiconductor, Where (a = Ba, Sr or Ca) [0698-0708]
12) Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates [0709-0713]
13) Studies on Metal-Oxide Semiconductor ZnO as a Hydrogen Gas Sensor [0714-0720]
14) The Optimization of Optical Thin Films Deposition Using In-Situ Reflectivity Measurements and Simulation [0721-0727]
15) MoSe2 / Polyaniline Solar Cells [0741-0746]
16) Simulation of CIGS Thin Film Solar Cells Using AMPS-1D [0747-0754]
17) Magnetron Sputtered Al-ZnO Thin Films for Photovoltaic Applications [0755-0765]
18) Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell [0766-0775]
19) A Nano-Biosensor for DNA Sequence Detection Using Absorption Spectra of SWNT-DNA Composite [0776-0782]
20) Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [0783-0786]
21) Design Optimization of Deflection Caused After Release of Multilayer Structural Membrane of Symmetric Toggle Switch [0787-0791]
22) An Effective Modeling Approach for High Efficient Solar Cell Using Virtual Wafer Fabrication Tools [0792-0801]
23) Fabrication and Time Degradation Study of Mercuric Iodide (Red) Single Crystal X-Ray Detector [0802-0807]
24) Electrostatics of Silicon Nano Transistor [0808-0813]
25) Spatial Confinement of Optical Phonons in ZnO Nanowalls and Nanorods [0814-0817]
26) P-V Relation for Mercuric Calcogenides: Ab Initio Method [0818-0822]
27) On the Possibility of Enhanced Efficiency in (Zn, Cd)S Dye Sensitized Solar Cell [0823-0831]
28) Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [0832-0837]
