Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology
| Authors | Ashok M. Mahajan1, Anil G. Khairnar1, Brian J. Thibeault2 |
| Affiliations | 1 Department of Electronics, North Maharashtra University, Jalgaon - 425001 [M.S.], India 2 ECE Department, University of California, Santa Barbara, CA, USA |
| Е-mail | ammahajan@nmu.ac.in |
| Issue | Volume 3, Year 2011, Number 1, Part 4 |
| Dates | Received 04 February 2011, in final form 13 October 2011, published online 17 October 2011 |
| Citation | Ashok M. Mahajan, Anil G. Khairnar, Brian J. Thibeault, J. Nano- Electron. Phys. 3 No1, 647 (2011) |
| DOI | |
| PACS Number(s) | 77.55.+ f, 81.20.Fw, 33.20.Ea |
| Keywords | Al2O3, High-k (14) , Gate dielectric (5) , MOS capacitor, Ellipsometer, C-V (10) , ALD (2) . |
| Annotation | The high dielectric constant (high-k) thin film of Al2O3 was deposited by using Plasma enhanced atomic layer deposition (PE-ALD) technique. The electron beam evaporation system was used to deposit the Pt-Ti metal to fabricate the Pt-Ti/Al2O3/Si MOS capacitors. Thickness measurement of Al2O3 gate dielectric was carried out with variable angle spectroscopic ellipsometry, which is measured to be 2.83 nm. The MOS capacitors were characterized to evaluate the electrical properties using capacitance voltage (C-V) analyzer at different measurement frequencies. Capacitance voltage measurement shows that, dielectric constant k ranges from 7.87 to 10.44. In CV curve a slight negative shift is observed in the flatband voltage because of presence of trap charges in the Al2O3 MOS capacitor. A lower equivalent oxide thickness (EOT) of 1.057 nm is obtained for the fabricated Pt-Ti/ Al2O3 /Si MOS capacitors. |
|
List of References |
Other articles from this number
1) Photoluminescence and EPR Studies of ZnS Nanoparticles Co-Doped With Mn and Te [0639-0646]2) Inter-Electrode Separation Induced Amorphous-to-Nanocrystalline Transition of Hydrogenated Silicon Prepared by Capacitively Coupled RF PE-CVD Technique [0651-0661]
3) Optical Fiber Based Spectral Response Measurement System for Multi-Junction Solar Cells [0662-0666]
4) Activation Energy of Polycrystalline Silicon Thin Film Transistor [0667-0670]
5) Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [0671-0675]
6) Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer [0676-0679]
7) A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [0680-0683]
8) Schottky Contact of Gallium on p-Type Silicon [0684-0690]
9) Enhancement in Thermoelectric Power in Lead Telluride Nanocomposite: Role of Oxygen Vis-À-Vis Nanostruct [0691-0697]
10) Structural, Optical, and Dielectric Properties of A[(Mg0.32Co0.02) Nb0.66]O3 Semiconductor, Where (a = Ba, Sr or Ca) [0698-0708]
11) Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates [0709-0713]
12) Studies on Metal-Oxide Semiconductor ZnO as a Hydrogen Gas Sensor [0714-0720]
13) The Optimization of Optical Thin Films Deposition Using In-Situ Reflectivity Measurements and Simulation [0721-0727]
14) Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [0728-0740]
15) MoSe2 / Polyaniline Solar Cells [0741-0746]
16) Simulation of CIGS Thin Film Solar Cells Using AMPS-1D [0747-0754]
17) Magnetron Sputtered Al-ZnO Thin Films for Photovoltaic Applications [0755-0765]
18) Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell [0766-0775]
19) A Nano-Biosensor for DNA Sequence Detection Using Absorption Spectra of SWNT-DNA Composite [0776-0782]
20) Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [0783-0786]
21) Design Optimization of Deflection Caused After Release of Multilayer Structural Membrane of Symmetric Toggle Switch [0787-0791]
22) An Effective Modeling Approach for High Efficient Solar Cell Using Virtual Wafer Fabrication Tools [0792-0801]
23) Fabrication and Time Degradation Study of Mercuric Iodide (Red) Single Crystal X-Ray Detector [0802-0807]
24) Electrostatics of Silicon Nano Transistor [0808-0813]
25) Spatial Confinement of Optical Phonons in ZnO Nanowalls and Nanorods [0814-0817]
26) P-V Relation for Mercuric Calcogenides: Ab Initio Method [0818-0822]
27) On the Possibility of Enhanced Efficiency in (Zn, Cd)S Dye Sensitized Solar Cell [0823-0831]
28) Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [0832-0837]
