Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications
| Authors | Ashish Kumar1 , Seema Vinayak2, R. Singh1 |
| Affiliations | 1 Indian Institute of Technology Delhi, Hauz Khas, 110016, New Delhi, India 2 Solid State Physical Laboratory, Timarpur, 110054, Delhi, India |
| Е-mail | ashishkr.iitd@gmail.com |
| Issue | Volume 3, Year 2011, Number 1, Part 4 |
| Dates | Received 04 February 2011, in final form 13 October 2011, published online 17 October 2011 |
| Citation | Ashish Kumar, Seema Vinayak, R. Singh, J. Nano- Electron. Phys. 3 No1, 671 (2011) |
| DOI | |
| PACS Number(s) | 73.30. + y, 73.40.Ei, 73.40.Sx |
| Keywords | GaN (34) , Schottky diode (10) , Thermionic (3) , Current-voltage (17) , XRD (90) , AFM (18) . |
| Annotation |
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN. The GaN was epitaxially grown on c-plane sapphire by metal organic chemical vapor deposition (MOCVD) technique and had a thickness of about 3.7 µm. The calculated ideality factor and barrier height from current-voltage (I-V) characteristics (at 300 K) for two GaN Schottky diodes were close to ~1.3 and ~ 0.8 eV respectively. A high reverse leakage current in the order of 10 – 4A/cm2 (at – 1 V) was observed in both diodes. A careful analysis of forward bias I-V characteristics showed very high series resistance and calculation for ideality factor indicated presence of other current transport mechanism apart from thermionic model at room temperature. |
|
List of References |
Other articles from this number
1) Photoluminescence and EPR Studies of ZnS Nanoparticles Co-Doped With Mn and Te [0639-0646]2) Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology [0647-0650]
3) Inter-Electrode Separation Induced Amorphous-to-Nanocrystalline Transition of Hydrogenated Silicon Prepared by Capacitively Coupled RF PE-CVD Technique [0651-0661]
4) Optical Fiber Based Spectral Response Measurement System for Multi-Junction Solar Cells [0662-0666]
5) Activation Energy of Polycrystalline Silicon Thin Film Transistor [0667-0670]
6) Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer [0676-0679]
7) A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [0680-0683]
8) Schottky Contact of Gallium on p-Type Silicon [0684-0690]
9) Enhancement in Thermoelectric Power in Lead Telluride Nanocomposite: Role of Oxygen Vis-À-Vis Nanostruct [0691-0697]
10) Structural, Optical, and Dielectric Properties of A[(Mg0.32Co0.02) Nb0.66]O3 Semiconductor, Where (a = Ba, Sr or Ca) [0698-0708]
11) Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates [0709-0713]
12) Studies on Metal-Oxide Semiconductor ZnO as a Hydrogen Gas Sensor [0714-0720]
13) The Optimization of Optical Thin Films Deposition Using In-Situ Reflectivity Measurements and Simulation [0721-0727]
14) Strategic Review of Arsenide, Phosphide and Nitride MOSFETs [0728-0740]
15) MoSe2 / Polyaniline Solar Cells [0741-0746]
16) Simulation of CIGS Thin Film Solar Cells Using AMPS-1D [0747-0754]
17) Magnetron Sputtered Al-ZnO Thin Films for Photovoltaic Applications [0755-0765]
18) Molybdenum Back-Contact Optimization for CIGS Thin Film Solar Cell [0766-0775]
19) A Nano-Biosensor for DNA Sequence Detection Using Absorption Spectra of SWNT-DNA Composite [0776-0782]
20) Temperature Dependent I-V Characteristics of Ag/P-Sn0.2Se0.8 Thin Film Schottky Barrier Diode [0783-0786]
21) Design Optimization of Deflection Caused After Release of Multilayer Structural Membrane of Symmetric Toggle Switch [0787-0791]
22) An Effective Modeling Approach for High Efficient Solar Cell Using Virtual Wafer Fabrication Tools [0792-0801]
23) Fabrication and Time Degradation Study of Mercuric Iodide (Red) Single Crystal X-Ray Detector [0802-0807]
24) Electrostatics of Silicon Nano Transistor [0808-0813]
25) Spatial Confinement of Optical Phonons in ZnO Nanowalls and Nanorods [0814-0817]
26) P-V Relation for Mercuric Calcogenides: Ab Initio Method [0818-0822]
27) On the Possibility of Enhanced Efficiency in (Zn, Cd)S Dye Sensitized Solar Cell [0823-0831]
28) Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [0832-0837]
