Titanium Carbide Obtained by Magnetron Sputtering of Graphite on Heated Titanium Substrate
| Authors | O.E. Kaipoldayev , A.D. Muradov , Y.S. Mukhametkarimov , R.R. Nemkayeva , G.A. Baigarinova , M.B. Aitzhanov , N.R. Guseinov |
| Affiliations | Al-Farabi Kazakh National University, 71, Al-Farabi Ave., 050040 Almaty, Kazakhstan |
| Е-mail | qaipolda@gmail.com |
| Issue | Volume 9, Year 2017, Number 5 |
| Dates | Received 11 July 2017; revised manuscript received 18 August 2017; published online 16 October 2017 |
| Citation | O.E. Kaipoldayev, A.D. Muradov, Y.S. Mukhametkarimov, et al., J. Nano- Electron. Phys. 9 No 5, 05045 (2017) |
| DOI | 10.21272/jnep.9(5).05045 |
| PACS Number(s) | 61.50.Nw, 61.66.Fn |
| Keywords | Titanium carbide, Magnetron sputtering (14) , Raman spectroscopy (18) , Transition-metal carbide. |
| Annotation | Titanium carbide was synthetized by sputtering graphite target on heated titanium substrate by magnetron sputtering process. The obtained samples were characterized by X-ray diffraction (XRD) analysis and Raman spectroscopy, the elemental analysis was made by Energy-dispersive X-ray spectroscopy (EDX). Titanium carbide (TiC) structure was obtained by deposition of sputtered carbon atoms and clusters to the resistively heated titanium substrate surface with temperatures 700 °C, 800 °C, 900 °C and 1000 °C. The XRD analysis showed that the formation of TiC structure is take place when the substrate is heated to 1000 °C. The Raman spectroscopy showed that when the incident power of laser is 100 % (35 mW) the structure is unstable in samples with the substrate temperatures 700 °C, 800 °C and 900 °C and the most stable titanium carbide structure is created when the substrate temperature is 1000 °C. |
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