Authors | R.V. Zaitsev |
Affiliations | National Technical University «Kharkiv Politechnic Institute», 21, Frunze Str., 61002 Kharkiv, Ukraine |
Е-mail | |
Issue | Volume 7, Year 2015, Number 2 |
Dates | Received 14 April 2015; published online 10 June 2015 |
Citation | R.V. Zaitsev, J. Nano- Electron. Phys. 7 No 2, 02024 (2015) |
DOI | |
PACS Number(s) | 84.60.Jt |
Keywords | Single-crystal silicon solar cell, Magnetic field (7) , Magnetic vinyl. |
Annotation | It is experimentally established that efficiency of single-junction (SJ) single-crystal silicon solar cells (Si-SC) with horizontal n+-p-p+ diode structure can increase approximately in 1.1 time after their processing at a room temperature during 7 days by perpendicularly oriented stationary magnetic field (SMF) with induction 0,2 T. It can be explained by the reduction of recombination centers quantity in SJ Si-SC base crystals, on what is indicates the increase of minority charge carriers lifetime in silicon under the influence of SMF. The possibility of the achieved positive effect subsequent stabilizing is shown due to attachment to SJ Si-SC from the side of back electrode the thin layer of magnetic vinyl, creating in base crystal magnetic field with induction no more than 0.05 T. |
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