Автори | Mourad Elbar1, Souad Tobbeche1, Slimane Chala1,2, Okba Saidani1, Mohamed Nadjib Kateb1, Mohamed Redha Serdouk1 |
Афіліація |
1Laboratory of Metallic and Semiconducting Materials, Mohamed Khider University, 07000 Biskra, Algeria 2Institute of Electrical and Electronic Engineering, M’Hamed Bougara University, 35000 Boumerdes, Algeria |
Е-mail | m.elbar@univ-biskra.dz |
Випуск | Том 15, Рік 2023, Номер 1 |
Дати | Одержано 03 січня 2023; у відредагованій формі 16 лютого 2023; опубліковано online 24 лютого 2023 |
Цитування | Mourad Elbar, Souad Tobbeche, et al., J. Nano- Electron. Phys. 15 No 1, 01020 (2023). |
DOI | https://doi.org/10.21272/jnep.15(1).01020 |
PACS Number(s) | 78.20.Bh, 73.40.Lq, 84.60.Jt |
Ключові слова | Numerical simulation (4) , Silvaco-Atlas (2) , Temperature (46) , CGS/CIGS Tandem cell, Matching current. |
Анотація |
The CGS and CIGS being promising materials for large scale photovoltaic applications, the effect of temperature on the electrical parameters of a CGS/CIGS tandem solar cell has been investigated in this work. The copper gallium diselenide (CGS) and copper indium gallium diselenide (CIGS) structures as top-cell and bottom-cell respectively, were numerically simulated under AM1.5G spectral illumination using the two-dimensional device simulator Silvaco-Atlas. The temperature dependency of the solar cell’s characteristics was investigated in the temperature range from 300 to 400 K at intervals of 20 K. The simulation results show the density current (Jsc) slightly increases whereas the open-circuit voltage (Voc) and fill factor (FF), conversion efficiency (η) decreases with the increase in temperature. The tandem cell operating temperature efficiency was found to be (– 0.34 %/K), which is slightly higher than that of CGS solar cell (– 0.29 %/K), but markedly better than that of CIGS solar cell (– 0.41 %/K). |
Перелік посилань |