P-Type Transparent nio Thin Films by E-Beam Evaporation Techniques
| Автори | K.J. Patel1 , M.S. Desai1 , C.J. Panchal1 , Bharati Rehani2 |
| Приналежність | 1 Applied Physics Department, Faculty of Technology & Engineering, The M. S. University of Baroda, Vadodara 390001, Gujarat, India 2 Metallurgical and Materials Engineering Department, Faculty of Technology & Engineering The M. S. University of Baroda, Vadodara 390001, Gujarat, India |
| Е-mail | cjpanchal_msu@yahoo.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 2 |
| Дати | Received 04 February 2011, in final form 27 April 2011, published online 08 May 2011 |
| Посилання | K.J. Patel, M.S. Desai, C.J. Panchal, Bharati Rehani, J. Nano- Electron. Phys. 3 No1, 376 (2011) |
| DOI | |
| PACS Number(s) | 72.80.Ga, 81.15.Ef, 61.05.C – , 78.20. – e, 73.40.Lq |
| Ключові слова | Vacuum deposition (2) , Glancing incident X-ray diffraction (GIXRD), NiO thin film (5) , P-type semiconductor, p-n junction (2) . |
| Анотація |
Nickel oxide (NiO) semiconductors thin films were prepared by e-beam evaporation technique at different substrate temperatures ranging from room temperature to 400 °C on glass substrate. Glancing incident X-ray diffraction depict that with the increases in substrate temperature the preferred orientation changes from (111) to (200) direction. Atomic force microscopy was used to investigate the surface morphology of the NiO thin films. The transmittance of NiO thin film increases with substrate temperature. NiO thin film was also deposited on n-type indium tin oxide (ITO) thin films to investigate the diode characteristic of p-NiO/n-ITO junction. |
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Перелік посилань |
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