Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films
| Автори | A. Mallikarjuna Reddy1, Ch. Seshendra Reddy1, A. Sivasankar Reddy2, P. Sreedhara Reddy1 |
| Приналежність | 1 Department of Physics Sri Venkateswara University, Tirupati-517502, India 2 Division of Advanced Material Science and Engineering, Kongju National University, Kongju City 182, Republic of Korea |
| Е-mail | malliphysics@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 2 |
| Дати | Received 04 February 2011, in final form 01 May 2011, published online 08 May 2011 |
| Посилання | A. Mallikarjuna Reddy, Ch. Seshendra Reddy, et al., J. Nano- Electron. Phys. 3 No1, 225 (2011) |
| DOI | |
| PACS Number(s) | 43.35.Ns, 68.60.Bs |
| Ключові слова | Sputtering (24) , Structural properties (9) , Electrical properties (19) , Annealing temperature (5) . |
| Анотація |
Nickel oxide (NiO) is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200) preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 Ω cm was observed after annealing. |
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Перелік посилань |
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