Thermal and Dielectric Studies on Ge10Se69Tl21 Chalcogenide Glass
| Автори | B.J. Madhu1, H.S. Jayanna2, S. Asokan3 |
| Приналежність | 1 Post Graduate Department of Physics, Government Science College, 577501, Chitradurga, India 2 Department of Physics, Kuvempu University, 577541, Shankaraghatta, India 3 Department of Instrumentation and Applied Physics, Indian Institute of Science, 560 012, Bangalore, India |
| Е-mail | bjmadhu@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 2 |
| Дати | Received 04 February 2011, in final form 03 May 2011, published online 08 May 2011 |
| Посилання | B.J. Madhu, H.S. Jayanna, S. Asokan, J. Nano- Electron. Phys. 3 No1, 308 (2011) |
| DOI | |
| PACS Number(s) | 61.43.Fs, 65.60. + a, 77.22. – d |
| Ключові слова | Chalcogenide glass (5) , Thermal analysis (3) , Alternating differential scanning calorimetry, Dielectric properties (6) , Dielectric constant (8) , Dielectric loss factor. |
| Анотація |
Bulk Ge10Se69Tl21 chalcogenide glass is prepared by melt quenching technique. Thermal analysis of bulk Ge10Se69Tl21 glass has been undertaken using temperature modulated Alternating Differential Scanning Calorimetry (ADSC). The Ge10Se69Tl21 glass is found to exhibit single glass transition temperature (Tg) and double stage crystallization reactions (Tc1 & Tc2). The dependence of dielectric properties such as dielectric loss tangent (tanδ), dielectric constant (ε’) and dielectric loss factor (ε’’) on the frequency has been studied at the room temperature in the frequency range 10 kHz to 5 MHz. The dielectric parameters tanδ, ε’and ε’’ are found to decrease with the increase in the frequency. Further, resistance of the Ge10Se69Tl21 sample is also found to decrease with the increase in the frequency. |
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