Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

Автори Neha Goel1 , Manoj Kumar Pandey2
Приналежність

1 Research Scholar, SRM University, NCR Campus Ghaziabad, India

2 Department of ECE, SRM University NCR Campus Ghaziabad, India

Е-mail nehagoel@rkgit.edu.in, mkspandey@gmail.com
Випуск Том 8, Рік 2016, Номер 1
Дати Одержано 23.10.2015, опубліковано online - 15.03.2016
Посилання Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 8 No 1, 01041 (2016)
DOI 10.21272/jnep.8(1).01041
PACS Number(s) 85.30.tv
Ключові слова Silicon on insulator (SOI), Poisson’s Equation (4) , Front surface potential, Threshold voltage (15) , Electric field (6) , Drain Current (3) .
Анотація In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson’s equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.

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