Автори | M. Benhaliliba1 , Y.S. Ocak2 |
Афіліація | 1 Material Technology Department, Physics Faculty, USTOMB University, BP1505 Oran, Algeria 2 Dicle University, Education Faculty, Science Department, 21280 Diyarbakir, Turkey |
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Випуск | Том 8, Рік 2016, Номер 1 |
Дати | Одержано 04.08.2015, у відредагованій формі - 02.03.2016, опубліковано online - 15.03.2016 |
Цитування | M. Benhaliliba, Y.S. Ocak, J. Nano- Electron. Phys. 8 No 1, 01040 (2016) |
DOI | 10.21272/jnep.8(1).01040 |
PACS Number(s) | 77.84.Bw, 68.47.Gh |
Ключові слова | Zinc oxide (10) , Film synthesis, Metal doping, Dip coating (4) , Structural parameters (5) , Transmittance (7) , Optical band gap (7) , Resistivity (11) . |
Анотація | The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on X-ray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films ( 80 %) and optical band gap. Using the Hall Effect measurement (HMS) in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity. |
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