Автори | S. Kaleemulla , N. Madhusudhana Rao, N. Sai Krishna, M. Kuppan , M. Rigana Begam , M. Shobana |
Афіліація | Thin Films Laboratory, Materials Physics Division, School of Advanced Sciences, VIT University, Vellore 632014 Tamilnadu, India |
Е-mail | skaleemulla@gmail.com |
Випуск | Том 5, Рік 2013, Номер 4 |
Дати | Одержано 03.08.2013, опубліковано online - 31.01.2014 |
Цитування | S. Kaleemulla, N. Madhusudhana Rao, N. Sai Krishna, et al., J. Nano- Electron. Phys. 5 No 4, 04048 (2013) |
DOI | |
PACS Number(s) | 68.55.Jk, 73.61. – r, 78.55. – m |
Ключові слова | Indium oxide, Flash evaporation (3) , Transparent conducting oxide (6) . |
Анотація | Cu-doped In2O3 thin films were prepared using flash evaporation method at different Cu-doping levels. The effect of annealing was studied on the structure, morphology and optical properties of the thin films. The films exhibited cubic structure and optical transmittance of the films increasing with annealing temperature. The highest optical transmittance of 78 % was observed with band gap of 4.09 eV. |
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