Автори | S.L. Khrypko, V.V. Kidalov, E.V. Kolominska |
Афіліація | Berdyansk State Pedagogical University, 4, Shmidta St., 71100 Berdyansk, Ukraine |
Е-mail | |
Випуск | Том 7, Рік 2015, Номер 1 |
Дати | Одержано 02.11.2014, опубліковано online - 25.03.2015 |
Цитування | S.L. Khrypko, V.V. Kidalov, E.V. Kolominska, J. Nano- Electron. Phys. 7 No 1, 01003 (2015) |
DOI | |
PACS Number(s) | 61.43.Gt, 78.30.Fs, 78.55.m |
Ключові слова | InP (9) , Porous (14) , Modeling (20) , Nano-surfaces. |
Анотація | This paper describes a mechanism for obtaining a regular porous structure InP, which is to use the method of photoelectrochemical etching. Through the use of simulation etching at the nanoscale, it is possible to get a regular uniform grid of nanopores on the surface of indium phosphide, which allows us to understand the mechanisms and the establishment of technological regimes anodic structures indium phosphide to produce a variety of devices. |
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