| Автори | Ashok Rao1 , J. Benedict Christopher1, Ganesh Sanjeev2 , G.S. Okram3 |
| Афіліація | 1 Department of Physics, Manipal Institute of Technology, Manipal University, Manipal-576104, India 2 Microtron Centre, Mangalore University, Mangalagangotri – 574199, DK, Karnataka, India 3 UGC-DAE Consortium for Scientific Research, University Campus, Indore-452017, India |
| Е-mail | ashokanu_rao@rediffmail.com |
| Випуск | Том 7, Рік 2015, Номер 1 |
| Дати | Одержано 05.12.2014, опубліковано online - 25.03.2015 |
| Цитування | Ashok Rao, J. Benedict Christopher, Ganesh Sanjeev, G.S. Okram, J. Nano- Electron. Phys. 7 No 1, 01001 (2015) |
| DOI | |
| PACS Number(s) | 81.20.Ev, 72.15.Eb, 72.15.Jf |
| Ключові слова | Solid state reaction technique, Electrical resistivity (5) , Thermoelectric power (2) . |
| Анотація | In this communication, we are reporting the effect of electron beam (e-beam) irradiation on thermoelectric properties of La0.8Sr0.2MnO3 manganites. The samples were prepared using solid state reaction technique. It is observed that the lattice volume increases with increase in dosage of e-beam. With irradiation an increase in resistivity is observed. For small irradiation dosage, we first observe a decreases in metal-insulator transition temperature TMI; thereafter TMI increases with further increase in dosage of irradiation. Both, the resistivity data and thermo-electric power data demonstrate that small polaron hopping model is valid in high temperature region. |
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