Electrophysical Properties of Nanoscale Functional Materials Based on Fe and Ge for Sensor Electronic

Authors O.V. Vlasenko , V.M. Matuznyi, D.R. Hyriavenko, V.F. Nefedchenko, O.O. Pasko , L.V. Odnodvorets , I.M. Lukavenko
Affiliations

Sumy State University, 116, Kharkivska st., 40007 Sumy, Ukraine

Е-mail l.odnodvorets@aph.sumdu.edu.ua
Issue Volume 17, Year 2025, Number 4
Dates Received 04 July 2025; revised manuscript received 25 August 2025; published online 29 August 2025
Citation O.V. Vlasenko, V.M. Matuznyi, D.R. Hyriavenko, et al., J. Nano- Electron. Phys. 17 No 4, 04031 (2025)
DOI https://doi.org/10.21272/jnep.17(4).04031
PACS Number(s) 61.66.Хх, 75.70.i, 75.47.Np
Keywords Metal germanide films, FeGe, FeGe2 and Fe2Ge phases, Electrophysical properties, Temperature coefficient of resistance, Transition from amorphous state to crystalline state, Sensor elements for affordable and clean energy systems.
Annotation

The results of studies of the electrophysical properties of nanoscale functional materials based on Fe and Ge under phase formation conditions was presented. It was established that during annealing of two- and three-layer films based on Fe and Ge with a total thickness of up to 100 nm, iron germanides are formed in the form of FeGe, FeGe2 or Fe2Ge phases, which are thermally stable in a wide temperature range. Based on the experimental temperature dependences of resistance, the phase transition temperature from amorphous to crystalline state was determined: Tac = 580-600 K. At the annealing of film samples based on Fe and Ge with a fixed thickness of the Fe layer, an increase in the resistivity is observed in the first heating cycle in the temperature range of 300-700 K, which indicates intensive healing of defects and its sharp decrease in the range of 700-900 K. This feature of the temperature dependence of resistance is explained by the phase formation processes and is confirmed by electron microscopic studies. The TCR is (3-9)×10 – 4 K – 1, which indicates the high thermal stability of iron germanide films. It is shown that films Fe2Ge, FeGe and FeGe2 films are promising materials for use in multifunctional sensors for engineering and medical applications for continuous monitoring systems of physical parameters.

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