Microwave Photomodulation Method for Noninvasive Analysis of Doping Profiles in Inhomogeneous Semiconductor Structures
| Authors | S. Babychenko, O. Babychenko, О. Galat |
| Affiliations |
Kharkiv National University of Radio Electronic, Microelectronics, Electronic Devices and Appliences Department, Kharkiv, Ukraine |
| Е-mail | serhii.babychenko@nure.ua |
| Issue | Volume 17, Year 2025, Number 4 |
| Dates | Received 03 May 2025; revised manuscript received 18 August 2025; published online 29 August 2025 |
| Citation | S. Babychenko, O. Babychenko, О. Galat, J. Nano- Electron. Phys. 17 No 4, 04006 (2025) |
| DOI | https://doi.org/10.21272/jnep.17(4).04006 |
| PACS Number(s) | 81.70.Eх, 84.40. – х |
| Keywords | Microwave diagnostics, Non-destructive testing, Semiconductor structures, Inhomogeneous doping, Specific conductivity profile, Quality factor, Optical illumination, Resonator (3) , Absorption coefficient. |
| Annotation |
A non-destructive microwave method for testing inhomogeneously doped semiconductor structures is presented, enabling high-precision reconstruction of arbitrary specific conductivity profiles along the sample thickness. The method is based on analyzing variations in the quality factor of a microwave resonator under illumination of the sample with light of variable wavelength. A mathematical model is proposed that incorporates sample discretization along its thickness, the solution of the continuity equation for charge carriers, and the characteristic equation of the resonant system. It is shown that the probing depth is determined by the absorption coefficient, which depends on the wavelength of the incident optical radiation. The developed approach provides high spatial resolution and measurement accuracy, making it a valuable tool for quality control of materials in advanced microelectronic technologies. |
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List of References |
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