Electrical Properties and Photosensitivity of n-Mn2O3/p-InSe Heterojunctions Produced by the Spray Pyrolysis Method

Authors I.G. Orletskii1, I.G. Tkachuk2 , V.I. Ivanov2 , Z.D. Kovalyuk2 , A.V. Zaslonkin2

1Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky st., 58012 Chernivtsi, Ukraine

2Institute for Problems of Materials Science, Chernivtsi Branch, 5, I. Vilde st., 58001 Chernivtsi, Ukraine

Е-mail ivan.tkachuk.1993@gmail.com
Issue Volume 15, Year 2023, Number 5
Dates Received 10 July 2023; revised manuscript received 10 October 2023; published online 30 October 2023
Citation I.G. Orletskii, I.G. Tkachuk, et al., J. Nano- Electron. Phys. 15 No 5, 05004 (2023)
DOI https://doi.org/10.21272/jnep.15(5).05004
PACS Number(s) 73.40. – c, 78.66. – w
Keywords Indium Selenide, Mn2O3 (3) , Heterojunction (6) , Spray Pyrolysis (9) , I-V Characteristics (2) , Photosensitivity.

The conditions of application of thin semiconductor Mn2O3 films on p-InSe crystalline layered semiconductor substrates at a temperature of 623 K by the spray-pyrolysis method to create anisotypic heterojunctions n-Mn2O3/p-InSe were investigated. InSe is a promising material for photoelectronics. The use of the Mn2O3 film, which is transparent in the region of maximum photosensitivity of InSe, makes it possible to effectively exploit the optical properties of InSe in the fabrication of various semiconductor devices. The advantage of using layered semiconductors in the production of heterojunctions is that high-quality interfaces are obtained even with a significant discrepancy in the parameters of the crystal lattices of the starting materials. This significantly expands the choice of heterojunction materials. Electrical and photoelectric parameters of n-Mn2O3/p-InSe heterojunctions were measured and theoretical models describing them were proposed. The graphical dependencies of I-V characteristics, series resistance, height of the potential barrier and photosensitivity are constructed. It was established that these heterojunctions are photosensitive and have rectifying properties. Using the energy parameters of the starting materials, an energy diagram of the heterojunction was constructed, which allows for the analysis of physical processes in the obtained heterojunctions. Based on the temperature dependence of both direct and reverse I-V characteristics, the dynamics of changes in the energy parameters of the heterojunction with temperature, as well as the mechanisms of current flow through the heterojunction, are established. The spectral photosensitivity of the heterojunction was analyzed.

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