Electronic Spectrum of a Quasi-2D Semiconductor in Strong Electromagnetic Field
| Authors | B.A. Lukiyanets , D.V. Matulka |
| Affiliations |
Lviv Polytechnic National University, 12, Bandery st., 79013 Lviv, Ukraine |
| Е-mail | |
| Issue | Volume 15, Year 2023, Number 5 |
| Dates | Received 15 August 2023; revised manuscript received 18 October 2023; published online 30 October 2023 |
| Citation | B.A. Lukiyanets, D.V. Matulka, J. Nano- Electron. Phys. 15 No 5, 05034 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(5).05034 |
| PACS Number(s) | 71.22 |
| Keywords | Quasi-2D Semiconductor, Electronic (25) , Resonant Electromagnetic Irradiation. |
| Annotation |
The change in the shape of the spectra of a quasi-2D semiconductor under the action of resonant irradiation of the frequency , which is determined by the condition , is considered. The studies showed three types of such a changes. They were analysed in the two cases: a) depending on at fixed parameters of the quasi-2D semiconductor bands (effective masses mc, mh of electrons and holes in the plane of layers, overlap integrals c, h) and b) vice versa, when the band parameters change at fixed . The decisive role of c, h in the manifestation of one or another of the three types of the spectrum shape change is indicated. |
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