Electronic Spectrum of a Quasi-2D Semiconductor in Strong Electromagnetic Field

Authors B.A. Lukiyanets , D.V. Matulka

Lviv Polytechnic National University, 12, Bandery st., 79013 Lviv, Ukraine

Issue Volume 15, Year 2023, Number 5
Dates Received 15 August 2023; revised manuscript received 18 October 2023; published online 30 October 2023
Citation B.A. Lukiyanets, D.V. Matulka, J. Nano- Electron. Phys. 15 No 5, 05034 (2023)
DOI https://doi.org/10.21272/jnep.15(5).05034
PACS Number(s) 71.22
Keywords Quasi-2D Semiconductor, Electronic (25) , Resonant Electromagnetic Irradiation.

The change in the shape of the spectra of a quasi-2D semiconductor under the action of resonant irradiation of the frequency , which is determined by the condition , is considered. The studies showed three types of such a changes. They were analysed in the two cases: a) depending on at fixed parameters of the quasi-2D semiconductor bands (effective masses mc, mh of electrons and holes in the plane of layers, overlap integrals c, h) and b) vice versa, when the band parameters change at fixed . The decisive role of c, h in the manifestation of one or another of the three types of the spectrum shape change is indicated.

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