Photovoltaic Properties of Silicon Doped with Manganese and Germanium
| Authors | N.F. Zikrillaev , G.A. Kushiev , S.B. Isamov , B.A. Abdurakhmanov, O.B. Tursunov |
| Affiliations |
Tashkent State Technical University, 100095 Tashkent, Uzbekistan |
| Е-mail | |
| Issue | Volume 15, Year 2023, Number 1 |
| Dates | Received 05 December 2022; revised manuscript received 17 February 2023; published online 24 February 2023 |
| Citation | N.F. Zikrillaev, G.A. Kushiev, S.B. Isamov, et al., J. Nano- Electron. Phys. 15 No 1, 01021 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(1).01021 |
| PACS Number(s) | 66.30.Lw, 73.50.Pz |
| Keywords | Diffusion (11) , Germanium (3) , Manganese, Silicon (58) , Solubility, Concentration (6) , Binary complexes. |
| Annotation |
It has been found that silicon samples doped with manganese and germanium atoms form binary compounds of Si2GeMn type, which heavily impact to the electrophysical and optical properties of silicon. It was determined that effect of manganese atoms after diffusing into the silicon pre-doped with germanium atoms leads to 10 % decrease of optically active oxygen concentration. It has been experimentally proven that silicon doped with germanium and manganese atoms can be used for the development of infrared photodetectors operating in the wavelength range 1-8 m and allow for more sensitive detection of infrared radiation and temperature. |
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