Effects of Boron Diffusion on Titanium Silicide Formation

Authors H. Karboua1, N. Dahraoui2, M. Boulakroune3, T. Fortaki1

1Electronics Department, Faculty of Engineer Sciences, University Batna 2, 05000 Batna, Algeria

2Electronics and Communication Department, Faculty of New Technologies of Information and Communication, University Kasdi Merbah of Ouargla, 30000 Ouargla, Algeria

3Laboratory of Electrical Engineering Polytechnic Constantine, Electrical and Automatic Department, National Polytechnic School of Constantine, 25000 Constantine, Algeria

Е-mail khoucine4@yahoo.fr
Issue Volume 15, Year 2023, Number 1
Dates Received 20 December 2022; revised manuscript received 15 February 2023; published online 24 February 2023
Citation H. Karboua, N. Dahraoui, et al., J. Nano- Electron. Phys. 15 No 1, 01019 (2023)
DOI https://doi.org/10.21272/jnep.15(1).01019
PACS Number(s) 66.30.Lw, 68.49.Sf, 82.80Ms
Keywords SIMS, Titanium Silicide, Boron (8) , Simulation (35) , Diffusion (10) .

Secondary ion mass spectrometry (SIMS) has been used to investigate Boron diffusion in Titanium silicide layers for several annealing conditions of duration and temperature. Experimental profiles were simulated using a model based on the famous Fick’s laws and the effect accompanying boron diffusion during silicidation like segregation and clustering. The comparison between simulation results and those of the literature in the same annealing conditions shows a good agreement between our results and those of other works. This explains that boron diffusion in titanium silicide depends on segregation, clustering and the solid solubility exceeds. The simulation is based on the finite difference numerical method. High agreement between simulation and experiment is shown.

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