Oxidation of the n-GaAs Surface: Morphological and Kinetic Analysis

Authors Y.O. Suchikova , S.S. Kovachov, A.S. Lazarenko, I.O. Bardus, K. Tikhovod, O.I. Hurenko, I.T. Bohdanov
Affiliations

Berdyansk State Pedagogical University, 4, Schmidt St., Berdyansk, Ukraine

Е-mail yanasuchikova@gmail.com
Issue Volume 14, Year 2022, Number 3
Dates Received 15 April 2022; revised manuscript received 22 June 2022; published online 30 June 2022
Citation Y.O. Suchikova, S.S. Kovachov, A.S. Lazarenko, et al., J. Nano- Electron. Phys. 14 No 3, 03033 (2022)
DOI https://doi.org/10.21272/jnep.14(3).03033
PACS Number(s) 61.46.Bc
Keywords GaAs (19) , Oxidation (4) , Flade potential, Solidity, Round (4) , Stranski-Krastanov mechanism, Layer-plus-island growth.
Annotation

We study the directed oxidation processes of the n-GaAs surface as a result of the electrochemical treatment of a semiconductor in an aqueous-alcoholic solution of hydrochloric acid. The analysis of the volt-ampere characteristics was carried out in order to study the process kinetics, this made it possible to establish the formation stages of the oxide film and islands. The surface morphology was estimated according to the area characteristics, linear sizes, Solidity and Round islands. It was shown that the oxidation occurs by the Stranski-Krastanov mechanism. The formation study of own oxides on the GaAs surface is extremely important, because oxides can significantly impact the material properties. The native oxides of semiconductors are an inactive film that reliably protects the surface from environmental action and when interacting with aggressive substances. In addition, the native oxides of GaAs exhibit semiconductor properties that allow to create oxide/GaAs heterostructures with heterojunctions for optoelectronic applications.

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