Performance Study of Lead-Free Mixed Halide Cs2TiI6 – xBrx (where x = 1 to 5) Based Perovskite Solar Cell

Authors Kunal Chakraborty1 , S.V. Kumari2 , Sri Harsha Arigela3 , Mahua Gupta Choudhury1 , Sudipta Das4 , Samrat Paul1
Affiliations

1Department of Energy Engineering, NorthEastern Hill University, Shillong, Meghalaya, India

2Department of ECE, NRI Institute of Technology, Agiripalli, Krishna Dist, AP, India

3Department of Mechanical Engineering, Koneru Lakshmaiah Education Foundation, Guntur, AP, India

4Department of ECE, IMPS College of Engineering and Technology, Nityanandapur, Malda, W.B, India

Е-mail paulsamrat17@gmail.com
Issue Volume 14, Year 2022, Number 3
Dates Received 24 May 2022; revised manuscript received 24 June 2022; published online 30 June 2022
Citation Kunal Chakraborty, S.V. Kumari, Sri Harsha Arigela, et al., J. Nano- Electron. Phys. 14 No 3, 03001 (2022)
DOI https://doi.org/10.21272/jnep.14(3).03001
PACS Number(s) 73.50.Pz, 88.40.jm
Keywords Mixed halide, Perovskite (6) , EQE (2) , ISA (5) , SCAPS-1D (15) , Photovoltaic (13) .
Annotation

The present research work represents the study of device modelling and simulation of lead-free cesium titanium (IV) mixed halide (Cs2TiI6 – xBrx, where x = 1 to 5) based perovskite active layer. The active layer thickness, operating temperature and defect density are optimized for photovoltaic performance using SCAPS-1D (Solar Cell Capacitance Simulator – 1 Dimension) device simulator. The validity of the selection of appropriate physical and basic parameters for the proposed solar cell with cell architecture FTO/TiO2/Cs2TiI6 – xBrx/CuSCN/Ag was used for the study. The optimum cell performance of the proposed device was studied for different thicknesses of the active layer, device temperature and defect density of active materials. The numerical study using SCAPS-1D revealed optimum device performance for the thickness of perovskite materials Cs2TiI1Br5, Cs2TiI2Br4, Cs2TiI3Br3, Cs2TiI4Br2, Cs2TiI5Br1 at 1.0, 1.0, 0.4, 0.4, and 0.4 µm, respectively. The optimum device performance at temperaturesof 10, 10, 20, 20, and 20 °C was numerically simulated for Cs2TiI1Br5, Cs2TiI2Br4, Cs2TiI3Br3, Cs2TiI4Br2, and Cs2TiI5Br1 perovskite materials, respectively. The optimized defect density for all seven perovskite materials was found to be at 1010 cm – 3. The device has time of response of 1.27 µs for Cs2TiI2Br4, Cs2TiI3Br3, Cs2TiI4Br2, and Cs2TiI5Br1 absorbing layers and 1.18 µs for the Cs2TiI1Br5 absorbing layer-based device.

List of References