GaSe(β-CD(J2)) Architecture Supramolecular Clathrate: Properties and Application

Authors V. Maksymych1, Dariusz Calus2, R. Shvets1, P. Chabecki2, I. Bordun1, 2 , N. Pokladok1, F. Ivashchyshyn1
Affiliations

1 Institute of Applied Mathematics and Fundamental Sciences, Lviv Polytechnic National University, 12, Bandera St., 79013 Lviv, Ukraine

2Faculty of Electrical Engineering, Czestochowa University of Technology, 17, Al. Armii Krajowej, 42-200 Częstochowa, Poland

Е-mail
Issue Volume 14, Year 2022, Number 1
Dates Received 16 April 2021; revised manuscript received 22 February 2022; published online 28 February 2022
Citation V. Maksymych, Dariusz Calus et al., J. Nano- Electron. Phys. 14 No 1, 01002 (2022)
DOI https://doi.org/10.21272/jnep.14(1).01002
PACS Number(s) 81.05.Rm
Keywords GaSe (4) , Impedance spectroscopy (4) , Magnetoresistivity, Photo- and magnetocapacity, Inductivity.
Annotation

Modern nanotechnologies are designed to create functionally hybrid inorganic/organic materials with extraordinary properties. Great interest in this direction was gained by clathrates – inclusion compounds built on the host principle. Applying intercalation techniques, the supramolecular structures thus formed can be ordered in a certain way using inorganic matrices, forming clathrates of subhost> type. According to this principle, we formed GaSe<b-CD<J2>> clathrate. By forming this structure using weak interactions, it was possible to observe a giant magnetocapacitance effect at room temperature. Its obtained values indicate the prospects of using GaSe<b-CD<J2>> clathrate as a material for creating capacitive analogues of resistive storage devices. The observed effect is related to a special state of the impurity energy subsystem, which at room temperature will have a decisive influence. Thus, when <b-CD<J2>> supramolecular complex is introduced into the GaSe semiconductor matrix, impurity levels are split into bands and a quasi-continuous spectrum is formed in two temperature ranges: 248-252 and 298-332 K. The formation in this case also of deep quantum wells at the semiconductor matrix/supra-molecular complex interface led to the effect of negative capacitance, which, in turn, can be used to form non-gyratory delay lines that can be directly incorporated into the structure of micro- and nanoelectronics. The magnitude of this effect, according to the research results, can be controlled by illumination and an applied constant magnetic field. The theoretical calculations of the impurity energy spectrum, carried out based on impedance spectroscopy data according to the Geballe-Pollack theory, show good agreement with the experimental data.

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