Extensive Study of Position-Dependent Multi-Channel GAA MOSFET and its Effect on Device Performance
| Authors | Krutideepa Bhol, Umakanta Nanda |
| Affiliations |
School of Electronics Engineering, VIT-AP University, Amaravati, Andhra Pradesh 522237, India |
| Е-mail | uk_nanda@yahoo.co.in |
| Issue | Volume 14, Year 2022, Number 1 |
| Dates | Received 14 January 2022; revised manuscript received 20 February 2022; published online 28 February 2022 |
| Citation | Krutideepa Bhol, Umakanta Nanda, J. Nano- Electron. Phys. 14 No 1, 01018 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(1).01018 |
| PACS Number(s) | 85.30.Tv, 85.30.De |
| Keywords | GAA (27) , High-k (13) , Leakage current (3) , Subthreshold swing, Quantum (43) . |
| Annotation |
In this paper, a simulation study is carried out for a multi-channel gate all around (GAA) MOSFET with channel separation calculation. The simulation is performed in lower technology nodes by taking the quantum effect into consideration. The insulator used in this model is a high-k dielectric, which allows the device to be scaled down. The separation between the silicon channel and its effect on device performance is investigated extensively. The performance thus obtained is compared with different channel separations in terms of drain current (ID), threshold voltage (Vth), transconductance (gm) and switching ratio (Ion/Ioff). Further, the leakage current and associated short channel effect such as subthreshold swing (SS) and its dependence on channel separation are studied in detail. An improved value of oncurrent of 28.9 % along with SS of 70.34 mV/dec is achieved for a separation of 10 nm. However, a switching ratio of 9.13e+08 is obtained for a separation of 6 nm which is comparatively higher than 9 and 10 nm separation. |
|
List of References |
Other articles from this number
1) Effect of Deuterium Ion Implantation Dose on Microstructure and Nanomechanical Properties of Silicon [01001-1-01001-6]2) GaSe(β-CD(J2)) Architecture Supramolecular Clathrate: Properties and Application [01002-1-01002-5]
3) Study of the Structural and Electronic Properties of MgO in the Wurtzite Phase Using the Density Functional Theory [01003-1-01003-5]
4) Turbidimetric Monitoring of Phase Separation in Aqueous Solutions of Thermoresponsive Polymers [01004-1-01004-4]
5) Application of Harmonic Analysis and Principal Component Analysis for Discrimination of Adsorbates in Gas-Sensitive ITO/Nanostructured TiO2 Heterojunction [01005-1-01005-5]
6) A Compact Design of UWB Monopole Antenna with Dual Notched Bands for WiMAX Applications [01006-1-001006-5]
7) Triangular Split Ring Resonators for X-Band Applications and Operations [01007-1-01007-5]
8) Performance Estimation of Recessed Modified Junctionless Multigate Transistor [01008-1-01008-5]
9) Structural, Mechanical and Corrosion Behavior of Ni-P-TiO2 Composite Coatings: Effect of Current Density [01009-1-01009-5]
10) The Results of the Recalculation of the Effective X-ray Characteristic Temperature into Its Actual Value [01010-1-01010-5]
11) Dimensional Effects in Magnetoresistive Properties in Three-Layer Films [01011-1-01011-5]
12) Refractive Index Sensing and Label-Free Detection Employing Oval Resonator Structured Plasmonic Sensor [01012-1-01012-5]
13) Vickers Hardness Test of Steel Pipes Welded by High Frequency Induction [01013-1-01013-4]
14) Heavy Hole Interaction with Intrinsic Acceptor Defects in CdTe: Ab Initio Calculations [01014-1-01014-5]
15) Design and Analysis of a New Fractal Compact Antenna for Ultra-Wideband Applications [01015-1-01015-5]
16) Microwave Electrodynamic Characteristics of Ceramic Materials [01016-1-01016-4]
17) Crystal Structure of ZnxCd1-xS Nanocrystals Obtained by Self-Propagating High-Temperature Synthesis [01017-1-01017-5]
18) Triple Band Notched Microstrip Antenna Using Planar Series 2x2 Element Arrayfor 5G Communication System [01019-1-01019-5]
19) Electrochemical Properties of Hybrid Supercapacitors Formed Based on Carbon and ABO3-Type Perovskite Materials [01020-1-01020-6]
20) Platinum Nanoparticle Deposition on the Silicon Surface by Galvanic Replacement in DMSO Medium [01021-1-01021-5]
21) Propagation of Ultrashort Optical Pulses in an Anisotropic Optical Medium with Carbon Nanotubes in the Presence of an Alternating Electric Field [01022-1-01022-4]
22) 1064 nm Wavelength p-i-n Photodiode with Low Influence of Periphery on Dark Currents [01023-1-01023-4]
23) Electrical and Temperature Characteristics of Transistors with a Channel in the Form of a Carbon Nanotube [01024-1-01024-5]
24) Experiments on the Molecular Mechanism and Interface Structure of Pure and Doped Polymer Nanocomposites Used in Microelectronics [01025-1-01025-5]
25) Comparative XRD Analysis of the Stress State of a Thin Tungsten Ribbon and Magnetron-Sputtered Tungsten Coatings [01026-1-01026-5]
26) Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs [01027-1-01027-5]
27) Structural, Optical and Electrical Properties of rGO@SnO2 Nanopowder Obtained via Chemical Co-precipitation Method [01028-1-01028-4]
28) Features of Noise Generation in Graded-Gap III Nitride-based Diodes [01029-1-01029-5]
29) Mechanically Activated Polytetrafluoroethylene: Morphology and Supramolecular Structure [01030-1-01030-5]
30) Application of the Compton Effect to Solve Problems of Condensed Matter Physics [01031-1-01031-7]
31) Using Orthogonal Legendre Polynomials for Filtering Noisy Signals over a Limited Interval in Coordinate Space [01032-1-01032-5]
32) Comparison of the Effects of ZnO and TiO2 on the Performance of Perovskite Solar Cells via SCAPS-1D Software Package [01033-1-01033-5]
33) Ab Initio Study of the Electronic and Optical Properties of ZnO and BeO: First Principles Calculations [01034-1-01034-4]
34) Mode-Matching Method Applied to the Sound Reception Problem Using Helmholtz Resonator [01035-1-01035-7]
