Bipolar Resistive Switching Characteristics of Ex-situ Synthesized TiO2-ZnO Nanocomposite

Authors Rutuja U. Amate1, Pritam J. Morankar1, Navaj B. Mullani2, Kishorkumar V. Khot1 , Rajanish K. Kamat3 , Tukaram D. Dongale1 , Deok-kee Kim4

1Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India

2Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588, Korea

3Department of Electronics, Shivaji University, Kolhapur 416004, India

4Department of Electrical Engineering, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea

Issue Volume 12, Year 2020, Number 2
Dates Received 15 February 2020; revised manuscript received 15 April 2020; published online 25 April 2020
Citation Rutuja U. Amate, Pritam J. Morankar, et al., J. Nano- Electron. Phys. 12 No 2, 02025 (2020)
PACS Number(s) 78.67.Sc, 68.55. − a, 81.07. − b
Keywords Memristive device (2) , Nanocomposite (27) , Resistive switching (4) .

In this present article, we have reported a simple and cost-effective ex-situ synthesis of TiO2-ZnO (TZ) nanocomposite thin film by utilizing sol-gel, hydrothermal and solid-state reaction methods. The Ag/TZ/FTO nanocomposite device was developed and demonstrated the bipolar resistive switching (RS) characteristics for resistive memory applications. The result of XRD analysis confirms that the nanocomposite has mixed tetragonal and hexagonal crystal structures of TiO2 and ZnO, respectively. The hysteresis loop is an essential criterion for recognizing memristive devices and similar characteristic was noticed for the developed nanocomposite device. Besides, basic memristive properties were calculated from the I-V data. The charge transportation of Ag/TZ/FTO nanocomposite device takes place because of Ohmic and space charge limited current. The collective effect of oxygen vacancies and Ag ions was a basis of RS effect in the Ag/TZ/FTO nanocomposite device.

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