Authors | Nikita A. Khairnar1, Aditya A. Patil1, Shreeya H. Rane1, Sunil S. Nirmale1, Sandeep P. Shinde2, Rajanish K. Kamat3 , Tukaram D. Dongale1 , Deok-kee Kim4 |
Affiliations |
1Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, 416004 Kolhapur, India 2Department of Chemistry, Sathaye College, 400057 Mumbai, India 3Department of Electronics, Shivaji University, 416004 Kolhapur, India 4Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, 05006 Seoul, Republic of Korea |
Е-mail | tdd.snst@unishivaji.ac.in |
Issue | Volume 12, Year 2020, Number 2 |
Dates | Received 15 February 2020; revised manuscript received 11 April 2020; published online 25 April 2020 |
Citation | Nikita A. Khairnar, Aditya A. Patil, Shreeya H. Rane, et al., J. Nano- Electron. Phys. 12 No 2, 02003 (2020) |
DOI | https://doi.org/10.21272/jnep.12(2).02003 |
PACS Number(s) | 61.46.Km, 78.30.cd |
Keywords | ZnO (92) , Nanorods (3) , Ionic liquid, Chemical route, Resistive switching (4) , Memristive effect. |
Annotation |
The majority of the research work in the area of resistive switching has been carried out with the help of organic, inorganic and hybrid materials. Only a few reports investigate resistive switching properties of ionic liquid and soft materials. In this report, we have synthesized ZnO nanorods (NRs) and Bmim(Br) ionic liquid using simple and low-temperature chemical route i.e., hydrothermal and reflux method, respectively. The structural study of ZnO NRs indicates that the formation of hexagonal crystal structure, evident from the XRD pattern. The FESEM image suggested the formation of nanorods like morphology. The effect of dispersed ZnO NRs on the resistive switching behavior of Bmim(Br) ionic liquid was studied. The study explains the change in switching behavior by dispersing the different concentrations of ZnO NRs in ionic liquid. The results demonstrated that the dispersed ZnO NRs in ionic liquid plays a vital role and will be a potential active switching material for resistive switching applications. |
List of References |