Deposition and Characterization of Indium Selenide Thin Films for Opto-electronic Devices

Authors Adhish V. Raval1, I.A. Shaikh1, V.M. Jain1 , N.M. Shastri2, P.B. Patel3, L.K. Saini1, D.V. Shah1

1Department of Applied Physics, S. V. National Institute of Technology, 395007 Surat, Gujarat, India

2Department of Physics, Veer Narmad South Gujarat University, 395007 Surat, Gujarat, India

3C. B. Patel Computer College and J. N. M. Patel Science College, Bharthana, 395007 Surat, Gujarat, India

Issue Volume 12, Year 2020, Number 2
Dates Received 18 February 2020; revised manuscript received 11 April 2020; published online 25 April 2020
Citation Adhish V. Raval, I.A. Shaikh, et al., J. Nano- Electron. Phys. 12 No 2, 02010 (2020)
PACS Number(s) 68.37.Hk, 78.66.Bz
Keywords InSe (5) , Thin film (101) , Drop-casting, Absorber layer, Opto-electronic devices.

Amongst all the III-VI semiconductors, ones that crystallize with a layered structure have gained special interest due to its significant usage in photovoltaic devices. III-VI layered semiconductor such as InSe has low density of dangling bonds on its surface therefore it is considered as vital material for the fabrication of opto-electronic devices like photo sensor, solar cell etc. In present work, InSe thin films were fabricated through a simple and facile drop-casting method, where the thin films were drop-casted between two silver paste electrodes on a glass substrate. The structural, surface morphological, compositional, electrical and optical properties of the prepared films were obsrved by XRD, SEM, EDAX, high precision digital multi-meter and UV-visible spectroscopy, respectively. XRD analysis of the prepared film shows the existence of nano-crystalline nature with monoclinic crystal structure of InSe. SEM images show good continuity of InSe film. InSe thin films are n-type with bandgap of 1.8 eV and their electrical conductivity is in the order of 10 – 10 S/cm that makes them appropriate for using as an absorber layer in the solar cell.

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