Effect of Top Electrode Materials on Switching Characteristics and Endurance Properties of Zinc Oxide Based RRAM Device
| Authors | Chandra Prakash Gupta1, Praveen K. Jain2, Umesh Chand3, Shashi Kant Sharma4, Shilpi Birla1, Sandeep Sancheti5 |
| Affiliations |
1 Department of Electronics and Communication Engineering, Manipal University Jaipur-303007, Rajasthan, India 2 Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India 3 Department of Computer Science and Electronics Engineering, National University of Singapore, Singapore 4 Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Ranchi, Jharkhand, India 5 SRM Institute of Science and Technology, Chennai, Tamilnadu 603203, India |
| Е-mail | cp106@rediffmail.com |
| Issue | Volume 12, Year 2020, Number 1 |
| Dates | Received 18 November 2019; revised manuscript received 15 February 2020; published online 25 February 2020 |
| Citation | Chandra Prakash Gupta, Praveen K. Jain, Umesh Chand, et al., J. Nano- Electron. Phys. 12 No 1, 01007 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(1).01007 |
| PACS Number(s) | 85.25.Hv, 77.80.Fm, 81.15.Pq, 77.55.hf |
| Keywords | RRAM (3) , Switching characteristics, Top electrode, ZnO (92) . |
| Annotation |
This work reports the effect of top electrode materials, i.e., Al, Ag, and Ti on the switching characteristics of resistive random access memory (RRAM) devices based on zinc oxide (ZnO) thin film. The RRAM devices with Si/Pt/Ti/ZnO/Top electrode (Al or Ag or Ti) structure were successfully fabricated, and their switching characteristics were measured. The structural properties of ZnO metal oxide thin film were studied using X-ray diffractometer (XRD), atomic force microscopy (AFM) and scanning electron microscope (SEM). The switching characteristics of the fabricated devices were measured with the help of I-V curves, which were measured using semiconductor parameter analyzer. It has been observed that the manufactured devices have exhibited bipolar properties. The Si/Pt/Ti/ZnO/Ag structure has shown the best endurance up to 103 cycles. Further, the measurement of retention properties at room temperature was also done for Si/Pt/Ti/ZnO/Ag structured device, which confirms the non-volatile properties of the obtained devices. The ratio of low resistance state (LRS) and high resistance state (HRS) was found maximum for Ag top electrode up to 102. It has been observed that LRS and HRS currents of the device do not degrade up to 104 s. |
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