Background of Creation of New Memory Storage Unit of “Bit + Qubit” Type Based on Nanoscale Structural Inhomogeneities of Domain Walls Formed in Uniaxial Ferromagnetic Films
| Authors | A.B. Shevchenko1 , M.Yu. Barabash2 |
| Affiliations |
1 G.V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine, 36, Academician Vernadsky Boulevard,03142 Kyiv, Ukraine 2 Technical Center, N.A.S. of Ukraine, 13, Pokrovs’ka St., 04070 Kyiv, Ukraine |
| Е-mail | mbarabash@nasu.kiev.ua |
| Issue | Volume 12, Year 2020, Number 1 |
| Dates | Received 18 September 2019; revised manuscript received 15 February 2020; published online 25 February 2020 |
| Citation | A.B. Shevchenko, M.Yu. Barabash, J. Nano- Electron. Phys. 12 No 1, 01026 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(1).01026 |
| PACS Number(s) | 75.70.kw, 75.45. + j |
| Keywords | Uniaxial ferromagnetic film, Domain wall (4) , Vertical Bloch line, Quantum oscillations, Memory storage “bit + qubit” unit. |
| Annotation |
It was proposed a new memory storage unit of “bit + qubit” type based on unipolar vertical Bloch lines located in the domain wall of a magnetic stripe domain formed in a uniaxial ferromagnetic film with strong magnetic anisotropy. This result opens up the prospects for creating memory storage devices with both the quantum and “classical” process of recording information. |
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List of References |
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