Background of Creation of New Memory Storage Unit of “Bit + Qubit” Type Based on Nanoscale Structural Inhomogeneities of Domain Walls Formed in Uniaxial Ferromagnetic Films

Authors A.B. Shevchenko1 , M.Yu. Barabash2

1 G.V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine, 36, Academician Vernadsky Boulevard,03142 Kyiv, Ukraine

2 Technical Center, N.A.S. of Ukraine, 13, Pokrovs’ka St., 04070 Kyiv, Ukraine

Issue Volume 12, Year 2020, Number 1
Dates Received 18 September 2019; revised manuscript received 15 February 2020; published online 25 February 2020
Citation A.B. Shevchenko, M.Yu. Barabash, J. Nano- Electron. Phys. 12 No 1, 01026 (2020)
PACS Number(s), 75.45. + j
Keywords Uniaxial ferromagnetic film, Domain wall (4) , Vertical Bloch line, Quantum oscillations, Memory storage “bit + qubit” unit.

It was proposed a new memory storage unit of “bit + qubit” type based on unipolar vertical Bloch lines located in the domain wall of a magnetic stripe domain formed in a uniaxial ferromagnetic film with strong magnetic anisotropy. This result opens up the prospects for creating memory storage devices with both the quantum and “classical” process of recording information.

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