Background of Creation of New Memory Storage Unit of “Bit + Qubit” Type Based on Nanoscale Structural Inhomogeneities of Domain Walls Formed in Uniaxial Ferromagnetic Films

Authors A.B. Shevchenko1 , M.Yu. Barabash2
Affiliations

1 G.V. Kurdyumov Institute for Metal Physics of the N.A.S. of Ukraine, 36, Academician Vernadsky Boulevard,03142 Kyiv, Ukraine

2 Technical Center, N.A.S. of Ukraine, 13, Pokrovs’ka St., 04070 Kyiv, Ukraine

Е-mail mbarabash@nasu.kiev.ua
Issue Volume 12, Year 2020, Number 1
Dates Received 18 September 2019; revised manuscript received 15 February 2020; published online 25 February 2020
Citation A.B. Shevchenko, M.Yu. Barabash, J. Nano- Electron. Phys. 12 No 1, 01026 (2020)
DOI https://doi.org/10.21272/jnep.12(1).01026
PACS Number(s) 75.70.kw, 75.45. + j
Keywords Uniaxial ferromagnetic film, Domain wall (4) , Vertical Bloch line, Quantum oscillations, Memory storage “bit + qubit” unit.
Annotation

It was proposed a new memory storage unit of “bit + qubit” type based on unipolar vertical Bloch lines located in the domain wall of a magnetic stripe domain formed in a uniaxial ferromagnetic film with strong magnetic anisotropy. This result opens up the prospects for creating memory storage devices with both the quantum and “classical” process of recording information.

List of References