First Order Phase Transformation in Amorphous Ge25Se75 – xSbx Glasses
| Authors | F.A. Al-Agel1, F.M. Al-Marzouki1, A.A. Al-Ghamdi1, Shamshad A. Khan2, M. Husain3 |
| Affiliations | 1 Department of Physics, King Abdulaziz University, Jeddah-21589, Saudi Arabia 2 Department of Physics, St. Andrew’s College, Gorakhpur, UP 273001, India 3 Department of Physics, Jamia Millia Islamia, New Delhi-110025, India |
| Е-mail | |
| Issue | Volume 5, Year 2013, Number 2 |
| Dates | Received 15 February 2013; revised manuscript received 06 May 2013; published online 07 May 2013 |
| Citation | F.A. Al-Agel, F.M. Al-Marzouki, A.A. Al-Ghamdi, et al., J. Nano- Electron. Phys. 5 No 2, 02021 (2013) |
| DOI | |
| PACS Number(s) | 71.55.Jv, 65.90. + I, 67.80.Gb, 73.61.Jc |
| Keywords | Glass transition temperature (3) , Crystallization kinetics, X-Ray diffraction (19) , Phase transformation. |
| Annotation | Non-isothermal Differential scanning calorimetry (DSC) technique was used to study the kinetics of first order phase transformation in Ge25Se75 – xSbx glasses. The X-ray diffraction (XRD) technique was employed to investigate the amorphous and crystalline phases in Ge25Se75 – xSbx glasses. From the heating rate dependences of crystallization temperature; the activation energy for crystallization and other kinetics parameters were derived. The temperature difference (Tc – Tg) and Tc is highest for the samples with 6 % of Sb. Hence, Ge25Se69Sb6 glass is most stable. The enthalpy released is found to be less for Ge25Se69Sb6 glass which further confirms its maximum stability. The activation energy of crystallization (Ec) is found to vary with compositions indicating a structural change due to the addition of Sb. The crystallization data are interpreted in terms of recent analyses developed for non-isothermal conditions. The present investigation indicates that both the glass transition and the crystallization processes occur in a single stage. |
|
List of References |
Other articles from this number
1) Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [02001-1-02001-3]2) Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium [02002-1-02002-3]
3) Growth and Characterization of Nickel Catalyzed Gallium Oxide Nanowires on Sapphire Substrate [02003-1-02003-3]
4) Control of Switching Characteristics of Silicon-based Semiconductor Diode Using High Energy Linear Accelerator [02004-1-02004-4]
5) Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts [02005-1-02005-3]
6) Modeling of Si-QD Solar Cell in MATLAB [02006-1-02006-3]
7) Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application [02007-1-02007-4]
8) Solar Cell Parameters Extraction from a Current-Voltage Characteristic Using Genetic Algorithm [02008-1-02008-3]
9) Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure [02009-1-02009-3]
10) Modeling and Design of AlN Based SAW Device and Effect of Reflected Bulk Acoustic Wave Generated in the Device [02010-1-02010-4]
11) An Improved SPICE Model for MEMS Based Capacitive Accelerometers [02011-1-02011-7]
12) Field Emission Behaviour of the Single Wall Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) System [02012-1-02012-3]
13) Effect of Rapid Thermal Annealing of CIGS Thin Film as an Absorber Layer [02013-1-02013-7]
14) Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs) [02014-1-02014-6]
15) Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [02015-1-02015-5]
16) Laser Induced Damage Studies on Al2O3, SiO2, and MgF2 Thin Films for Anti-Reflection Coating Application in High Power Laser Diode [02016-1-02016-4]
17) Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model [02017-1-02017-4]
18) Gamma Radiation Induced Effects in TeO2 Thin Films [02018-1-02018-3]
19) Dielectric Properties and AC Conductivity Measurements of Amorphous Ge15Se85 Glass [02019-1-02019-4]
20) A.C. Conductivity of Ag Incorporated Se-Te-Bi Glassy Alloy [02020-1-02020-5]
21) Structural Microstructural and Electrical Transport Studies of Ba(Fe0.25Eu0.25Nb0.5)O3 [02022-1-02022-4]
22) All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO [02023-1-02023-3]
23) Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations [02024-1-02024-3]
24) Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films [02025-1-02025-3]
25) X-ray Peak Broadening Analysis and Optical Studies of ZnO Nanoparticles Derived bySurfactant Assisted Combustion Synthesis [02026-1-02026-6]
26) Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates [02027-1-02027-4]
27) Effect on Structural, Micro Structural and Optical Properties due to Change in Composition of Zn and Sn in ZnO:SnO2 Nanocomposite Thin Films [02028-1-02028-4]
28) Preparation and Characterization of Antimony Doped Tin Oxide Thin Films Synthesized by Co-Evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation [02029-1-02029-4]
29) Evidence of Itinerant Ferromagnetism in Transition Metal Doped ZnO Nanostructures [02030-1-02030-5]
30) Effects of Annealing on Structural Properties of Copper Zinc Tin Sulphide (CZTS) Material [02031-1-02031-3]
31) Synthesis of Reduced Graphene Oxide Using Novel Exfoliation Technique and its Characterizations [02032-1-02032-3]
