Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
| Authors | Usha Parihar1, N. Padha1, C.J. Panchal2 |
| Affiliations | 1 Department of Physics& Electronics, University of Jammu, Jammu, 180006 J&K, India 2 M.S. University of Baroda, Faculty of Technology and Engineering, 390 009 Vadodara, India |
| Е-mail | pariusha@gmail.com |
| Issue | Volume 5, Year 2013, Number 2 |
| Dates | Received 15 February 2013; published online 04 May 2013 |
| Citation | Usha Parihar, N. Padha, C.J. Panchal, J. Nano- Electron. Phys. 5 No 2, 02015 (2013) |
| DOI | |
| PACS Number(s) | 73.40.QV, 73.61.Ey, 85.30 Hi |
| Keywords | Polycrystalline (2) , schottky diodes (2) , Flash evaporation (3) , Current-voltage (I-V) (2) , Capacitance-voltage (C-V) characteristics, Image force, Dipole lowering effects, Interface states, M-S junction template. |
| Annotation | Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed. |
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List of References |
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