Synthesis of Reduced Graphene Oxide Using Novel Exfoliation Technique and its Characterizations
| Authors | Asha R. Pai, Bipin Nair |
| Affiliations | Amrita School of Biotechnology, Amrita Vishwa Vidyapeetham, Amritapuri, Kollam – 690 525, Kerala, India |
| Е-mail | asharp@amritapuri.amrita.edu, bipin@amritapuri.amrita.edu |
| Issue | Volume 5, Year 2013, Number 2 |
| Dates | Received 15 February 2013; published online 04 May 2013 |
| Citation | Asha R. Pai, Bipin Nair, J. Nano- Electron. Phys. 5 No 2, 02032 (2013) |
| DOI | |
| PACS Number(s) | 62.23.Kn, 68.37.Ps, 68.37.Hk, 78.30. – j, 78.67. – n, 81.05.U –, 81.05.uf, 81.16.Be, 81.20. Ka, 82.70.Uv, 82.80.Dx, 83.80.Hj |
| Keywords | Graphite, Graphene (23) , Reduced Graphene oxide (2) , Nano-sheets, Oxidation (4) , Exfoliation (3) . |
| Annotation | For processing of graphene based composite materials Graphene oxide is considered to be the main precursor. Though epitaxial growth and chemical vapor deposition techniques have been utilized to get monolayers of graphene, wet chemical process have been used for its large scale synthesis. For the extraction of graphene monolayer the chemical route relies on the weakening of the Van der Waals cohesive force upon the insertion of reactants in the inter layer space as a consequence sp2 lattice is partially degraded into a sp2-sp3 sheet that possesses a less π-π stacking stability. The method described here uses a novel chemical exfoliation technique. The graphite from the pencil lead is used as the precursor and it is treated with alcohol-ketone-surfactant mixture and mechanically and thermally agitated so as to get the golden brown colored suspension. The material was characterized by Fourier Transform Infra Red spectroscopy. The absence of 1570 cm – 1 peak clearly indicates the oxidation of C = C bonds. The SEM images confirmed the presence of the nanoplatelets of graphene oxide. The AFM analysis confirmed the sheet thickness of the graphene oxide sheets to be < 5 nm. The sheet resistance of the sheets of thermally treated graphene oxide or reduced graphene oxide on Si wafer (p-type, 4-6 Ω/cm) was measured as 200-300 Ω/□. The Ellipsometric characterisations also matches with that of the thermally reduced graphene oxide films formed. |
|
List of References |
Other articles from this number
1) Characterization of GaN Nanorods Fabricated Using Ni Nanomasking and Reactive Ion Etching: A Top-Down Approach [02001-1-02001-3]2) Effect of Implantation Temperature on the Layer Exfoliation of H-implanted Germanium [02002-1-02002-3]
3) Growth and Characterization of Nickel Catalyzed Gallium Oxide Nanowires on Sapphire Substrate [02003-1-02003-3]
4) Control of Switching Characteristics of Silicon-based Semiconductor Diode Using High Energy Linear Accelerator [02004-1-02004-4]
5) Phase Transition Sensitive Schottky Barriers In Ga-Si(P) Contacts [02005-1-02005-3]
6) Modeling of Si-QD Solar Cell in MATLAB [02006-1-02006-3]
7) Mechanochemically Synthesized CIGS Nanocrystalline Powder for Solar Cell Application [02007-1-02007-4]
8) Solar Cell Parameters Extraction from a Current-Voltage Characteristic Using Genetic Algorithm [02008-1-02008-3]
9) Surface Passivation of Germanium Using NH3 Ambient in RTP for High Mobility MOS Structure [02009-1-02009-3]
10) Modeling and Design of AlN Based SAW Device and Effect of Reflected Bulk Acoustic Wave Generated in the Device [02010-1-02010-4]
11) An Improved SPICE Model for MEMS Based Capacitive Accelerometers [02011-1-02011-7]
12) Field Emission Behaviour of the Single Wall Carbon Nanotubes Grown by Plasma Enhanced Chemical Vapour Deposition (PECVD) System [02012-1-02012-3]
13) Effect of Rapid Thermal Annealing of CIGS Thin Film as an Absorber Layer [02013-1-02013-7]
14) Impact of Scaling Gate Insulator Thickness on the Performance of Carbon Nanotube Field Effect Transistors (CNTFETs) [02014-1-02014-6]
15) Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes [02015-1-02015-5]
16) Laser Induced Damage Studies on Al2O3, SiO2, and MgF2 Thin Films for Anti-Reflection Coating Application in High Power Laser Diode [02016-1-02016-4]
17) Kinetics of Amorphous-Crystalline Transformation of Some Se-Te-In Chalcogenide Glasses Using Gao and Wang Model [02017-1-02017-4]
18) Gamma Radiation Induced Effects in TeO2 Thin Films [02018-1-02018-3]
19) Dielectric Properties and AC Conductivity Measurements of Amorphous Ge15Se85 Glass [02019-1-02019-4]
20) A.C. Conductivity of Ag Incorporated Se-Te-Bi Glassy Alloy [02020-1-02020-5]
21) First Order Phase Transformation in Amorphous Ge25Se75 – xSbx Glasses [02021-1-02021-4]
22) Structural Microstructural and Electrical Transport Studies of Ba(Fe0.25Eu0.25Nb0.5)O3 [02022-1-02022-4]
23) All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO [02023-1-02023-3]
24) Pulsed Laser Deposited Nickel Doped Zinc Oxide Thin Films: Structural and Optical Investigations [02024-1-02024-3]
25) Structural and Optical Studies of Magnesium Doped Zinc Oxide Thin Films [02025-1-02025-3]
26) X-ray Peak Broadening Analysis and Optical Studies of ZnO Nanoparticles Derived bySurfactant Assisted Combustion Synthesis [02026-1-02026-6]
27) Study of Electrical, Optical and Structural Properties of Al- Doped ZnO Thin Films on PEN Substrates [02027-1-02027-4]
28) Effect on Structural, Micro Structural and Optical Properties due to Change in Composition of Zn and Sn in ZnO:SnO2 Nanocomposite Thin Films [02028-1-02028-4]
29) Preparation and Characterization of Antimony Doped Tin Oxide Thin Films Synthesized by Co-Evaporation of Sn and Sb using Plasma Assisted Thermal Evaporation [02029-1-02029-4]
30) Evidence of Itinerant Ferromagnetism in Transition Metal Doped ZnO Nanostructures [02030-1-02030-5]
31) Effects of Annealing on Structural Properties of Copper Zinc Tin Sulphide (CZTS) Material [02031-1-02031-3]
