The Asymmetry of the Distribution Density Volume Uncompensated Charge at the Metallurgical p-n Junction

Authors	A.S. Mazinov¹^,², А.I. Shevchenko¹, M.A. Bykov¹
Affiliations	¹ National Taurida V.I. Vernadsky University, 4 Vernadsky av., Simferopol 95007, Crimea, Ukrane ² Crimean Scientific Center of NAS and MES, 2 Vernadsky av., Simferopol 95007, Crimea, Ukrane
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Issue	Volume 4, Year 2012, Number 3
Dates	Received 31 August 2012; published online 07 November 2012
Citation	English version unavailable
DOI
PACS Number(s)	71.22._i, 71.23.An
Keywords	Shallow p-n junction, Doping profile of the crystal, Diffusion activation energy for diffusion, Density of the charge distribution, Uncompensated charge p-n junction.
Annotation	The features of the formation of shallow junction and its calculation for a solar cell based on single-crystal silicon with front boron were considered. The ambiguity of the calculated profiles recompensating impurity, which is dependent on the accuracy of the constants of diffusion equations, was shown.
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