Optical and Magnetic Properties of Silicon with Binary GexSi1 – x Nanocompounds

The paper presents the results of a study of the optical and magnetic properties of silicon with binary compounds obtained by diffusion technology from the gas phase. Diffusion of impurity atoms of germanium and manganese was carried out by a two-stage low-temperature diffusion technology, in which, taking into account the vapor pressure of germanium and manganese diffusants during diffusion, samples were obtained without erosion of the surface of the original material.The optical properties of the obtained silicon samples with binary compounds GexSi1 – x were studied on a Lambda 950 UV/Vis/NIR spectrometer. The results of the studies showed that in silicon samples with binary compounds GexSi1 – x, one of the main fundamental parameters of the original silicon changes, i.e. the energy of chemical bonds. A change in the energy of the chemical bond of silicon-germanium atoms will lead to a change in the lattice constant of the original silicon. Analysis of the study results showed a change in the optical properties of the original silicon. The magnetic properties of silicon doped with impurity atoms of germanium were studied after additional doping with impurity atoms of manganese. The selection of the impurity atom of manganese for additional doping is justified, because manganese atoms in silicon lead to an increase in the magnetic property of the silicon sample doped with impurity atoms of germanium. The results of the study showed that due to the unfilled d-shell of manganese atoms, the effect of the magnetic field magnitude leads to a strong change in the spin directions. The obtained results of the study allow creating new semiconductor devices based on silicon with binary GexSi1 – x and three-component MnGexSi1 – x compounds.