Comparative Analysis of the Properties ofManganese Silicide
| Authors | A.T. Mamadalimov1, M.Sh. Isaev2, 3 , S.R. Kodirov4, T.U. Atamirzaev5 M.N. Mamatkulov6, U.T. Asatov6 |
| Affiliations |
1Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, 100057 Tashkent, Uzbekistan 2National University of Uzbekistan named after Mirzo Ulugbek, 100174 Tashkent, Uzbekistan 3Cyber University of Uzbekistan, Nurafshan city, Uzbekistan 4Urgench State University, 220100 Urgench city, Uzbekistan 5Namangan State Technical University, Namangan, Uzbekistan 6Tashkent Institute of Chemical-Technology, Tashkent, Uzbekistan |
| Е-mail | isayevmahmud02@gmail.com |
| Issue | Volume 17, Year 2025, Number 5 |
| Dates | Received 25 July 2025; revised manuscript received 23 October 2025; published online 30 October 2025 |
| Citation | A.T. Mamadalimov, M.Sh. Isaev, et al., J. Nano- Electron. Phys. 17 No 5, 05011 (2025) |
| DOI | https://doi.org/10.21272/jnep.17(5).05011 |
| PACS Number(s) | 61.05.cp, 61.82.Fk, 73.43.Qt |
| Keywords | Manganese silicides, Thermal conductivity (3) , Electrical conductivity (10) , Mobility (10) , Temperature dependence, Phase composition (3) , Diffraction pattern, Symmetry, Hall effect (4) , ThermoEMF. |
| Annotation |
In this paper, a comparative analysis of the main physical, structural, thermoelectric and magnetic properties of various phases of manganese silicides is presented: mono- (MnSi), di (MnSi2) and higher silicides (MnSi1.75), obtained by the diffusion doping method. The temperature dependences of electrical conductivity, mobility, as well as thermoelectric properties, including the Seebeck coefficient and thermal conductivity, are studied. It is shown that manganese disilicide is an n-type semi-conductor with a band gap of ∆Eg 0.35 ÷ 0.45 eV. The Seebeck coefficient is 100 V/K at T 150 ÷ 200 K. It was established that the monosilicide has n-type conductivity, with a concentration of ~1021 ÷ 1022 cm – 3 and a mobility of 2 ÷ 5 cm2/Vꞏs, the disilicide has p-type conductivity, with a concentration of 1016 ÷ 1017 cm – 3 and a mobility of 1 cm2/Vꞏs, the higher silicide has n-type conductivity, with a concentration of 5ꞏ1020 ÷ 7ꞏ1020 cm – 3 and a mobility of 0.5 ÷ 2 cm2/Vꞏs. It is shown that each of these phases has a unique combination of crystallographic forms, electronic structure and technological capabilities, which determines their application in microelectronics, nanoelectronics and thermoelectric devices. |
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List of References |
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