X-Ray and Raman Spectroscopy of (Si2)1 – x(BP)x Binary Compounds in Silicon
| Authors | G.H. Mavlonov1 , N.F. Zikrillaev1 , A.A. Usmonov1, G.A. Kushiev1 , Kh.S. Turekeev2 |
| Affiliations |
1Tashkent State Technical University, 100095 Tashkent, Uzbekistan 2Nukus State Pedagogical Institute, Nukus, Republic of Karakalpakstan, Uzbekistan |
| Е-mail | zikrillaev.n@gmail.com |
| Issue | Volume 17, Year 2025, Number 5 |
| Dates | Received 07 August 2025; revised manuscript received 18 October 2025; published online 30 October 2025 |
| Citation | G.H. Mavlonov, N.F. Zikrillaev, et al., J. Nano- Electron. Phys. 17 No 5, 05009 (2025) |
| DOI | https://doi.org/10.21272/jnep.17(5).05009 |
| PACS Number(s) | 61.05.cp, 61.82.Fk, 73.43.Qt |
| Keywords | Semiconductor (62) , Silicon (58) , Boron (8) , Phosphorus, Raman Spectrum, Scattering (20) , Spectrometer, Laser (26) , Diffusion (11) . |
| Annotation |
This study investigates the interaction of phosphorus and boron impurity atoms in silicon using X-ray and Raman spectroscopy. Two groups of samples were prepared: the first group was doped with phosphorus atoms first, followed by boron atoms; in the second group, boron atoms were introduced first, followed by phosphorus atoms. Raman spectroscopy was used to analyze the formation of binary compounds of phosphorus and boron atoms in the silicon matrix, as well as their optical, photoelectric, and structural properties. The results showed that when phosphorus and boron atoms are present together in silicon, they significantly alter the crystal structure and electrical conductivity properties. Samples doped with phosphorus exhibited higher electrical conductivity and photoelectric properties, while samples doped with boron showed lower optical and electrical properties. The data obtained from Raman spectroscopy clearly demonstrated the atomic interactions and crystal structure. Additionally, the microstructural properties of the samples were studied using SEM (Scanning Electron Microscopy) and AFM (Atomic Force Microscopy). SEM analysis revealed the uneven distribution of boron and phosphorus atoms and nano-scale structures, while AFM analysis identified fine changes and structural defects on the surface of the doped silicon materials. The results of this study expand the possibilities for controlling the properties of semiconductors by doping silicon with impurity atoms and forming binary compounds, contributing to the development of new technological solutions and materials, especially in optoelectronics and sensor technologies. |
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