Tuning of Graphene Oxide Thin Films Synthesis and Characterization with Electronic Behaviour

Graphene oxide (GO), a graphene derivative, is synthesized through an improved Hummers method, enhancing its solubility, dispersibility, and reactivity by introducing oxygen-functional groups. The process involves oxidizing purified natural graphite flakes, followed by solvothermal treatment. Exfoliation of graphite oxide in distilled water using ultrasonic waves results in the formation of a graphene oxide thin film. This method optimizes the production of GO, harnessing its unique properties for various applications in materials science and nanotechnology. The structural and physicochemical characteristics of the materials were analyzed through X-ray powder diffraction (XRD), Fourier transformation (FTIR), Scanning electron microscopy (SEM), and ultraviolet-visible spectroscopy (UV-Vis). XRD peak indicated acorresponding to an inter-layer spacing of 0.83 nm. FTIR and Raman analyses revealed the introduction of oxygen atoms into the graphite layer, forming various chemical bonds such as C-H, OH, C=O, C-O-C, and COOH with graphene. SEM images illustrated the formation of ultrathin and homogeneous graphene films. The UV-vis spectra of GO exhibited a prominent absorption peak at approximately 239 nm, corresponding to the of atomic C-C bond and at 301 nm, corresponding to the n-π* transition of aromatic C-C bonds. The electrochemical behavior of a glassy carbon electrode modified with GO was explored using the redox couple system. The results indicated that the electron transfer process controlled the electrochemical behavior.