Low Voltage Symmetric Dual-Gate Organic Field Effect Transistor
| Authors | Imad Benacer1, Fateh Moulahcene1, Fateh Bouguerra2, Ammar Merazga1 |
| Affiliations |
1Institute of Science and Applied Technology (SAT Institute), University Of Oum El Bouaghi, Algeria 2Department of Electronics, University of Batan 2, Batna, Algeria |
| Е-mail | benacerimad@gmail.com |
| Issue | Volume 15, Year 2023, Number 2 |
| Dates | Received 05 December 2022; revised manuscript received 21 April 2023; published online 27 April 2023 |
| Citation | Imad Benacer, Fateh Moulahcene, Fateh Bouguerra, Ammar Merazga, J. Nano- Electron. Phys. 15 No 2, 02012 (2023) |
| DOI | https://doi.org/10.21272/jnep.15(2).02012 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Organic Field Effect Transistors (OFET), Low voltage, Single-gate (SG), Dual-gate (DG), Symmetric (2) , Numerical simulation (4) . |
| Annotation |
Dual-gate organic field effect transistors (DG-OFETs), where two separate channels are formed at the organic semiconductor-dielectric interface, have attracted much attention owning to their high performance in comparison to single-gate OFET (SG-OFET). In this paper, an organic module of Atlas device simulator for a low voltage SG-OFET has been used to predict the electrical characteristics and performance parameters. Thereafter, an additional dielectric and gate electrode has been introduced to SG-OFET to achieve better performance. Electrical behaviors of low-voltage (≤3V) DG-OFET have been studied by employing a symmetric configuration. This architecture exhibits a high drive current due to injection of sufficient charge carriers in both channels. The simulation results show higher drive current, carrier mobility and current on-off ratio, lower threshold voltage and subthreshold slope. These results demonstrate that the proposed symmetric configuration provide better performance when compared to the single gate. |
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