Authors | Rahmi Dewi, T.S. Luqman, Krisman, A.S. Rini, H. Yanuar |
Affiliations |
Department of Physics Universitas Riau, 28132 Pekanbaru, Indonesia |
Е-mail | yanuar.hamzah@lecturer.unri.ac.id |
Issue | Volume 15, Year 2023, Number 2 |
Dates | Received 05 December 2022; revised manuscript received 23 April 2023; published online 27 April 2023 |
Citation | Rahmi Dewi, T.S. Luqman, Krisman, et al., J. Nano- Electron. Phys. 15 No 2, 02018 (2023) |
DOI | https://doi.org/10.21272/jnep.15(2).02018 |
PACS Number(s) | 77.55.f, 78.20.Ci |
Keywords | BaZrxT1 – xO3 thin film, Sol-gel method (4) , Crystal structure (8) , Energy gap. |
Annotation |
BaZrxT1 – xO3 (BZT) thin film with x = 0.30 and 0.50 has been prepared with FTO glass substrate using a sol-gel method with an annealing temperature of 600 °C for one hour. BZT thin films are characterized using XRD and UV-vis to analyze their structural and optical properties. XRD spectra analysis of BZT thin films for the composition x = 0.3 and 0.5 crystal structure obtained is perovskite tetragonal. It has good crystals, while the diffraction angle 2θ would increase as the Zr content increase. The optical properties of BZT thin films were also analyzed, where the absorbance value increased with increasing Zr content at a wavelength of 300 – 375 nm. The band gap energy increases when composition (x) increases, and the highest band gap energy for composition x = 0.5 is about 3.54 eV. |
List of References |