Purification of the Cd(Mn)Te For X-ray Detector Crystals by Special Annealing
| Authors | Z. Zakharuk1, S. Dremlyuzhenko1 , S. Solodin1, E. Nykonyuk2, , B. Rudyk2, O. Kopach1, A. Opanasyuk3 , P. Fochuk1 |
| Affiliations | 1 Chernivtsi National University, 2, Kotziubynskogo Str., 58012 Chernivtsi, Ukraine, 2 National University of Water and Environmental Engineering, 11, Soborna Str., 33000 Rivne, Ukraine, 3 Sumy State University, 2, Rimsky Korsakov Str., 40007 Sumy, Ukraine |
| Е-mail | semirivne@gmail.com, opanasyuk_sumdu@ukr.net, p.fochuk@chnu.edu.ua |
| Issue | Volume 9, Year 2017, Number 6 |
| Dates | Received 15 September 2017; revised manuscript received 26 October 2017; published online 15 November 2017 |
| Citation | Z. Zakharuk, S. Dremlyuzhenko, et al., J. Nano- Electron. Phys. 9 No 6, 06004 (2017) |
| DOI | 10.21272/jnep.9(6).06004 |
| PACS Number(s) | 71.55.Eq, 72.80.Ey |
| Keywords | Solid solutions Cd1 – xMnxTe, Purification, Electrical characteristics, Optical measurements, Inclusions (2) , Thermal treatment. |
| Annotation | To purify Cd0,95Mn0,05Te ingots a modified travelling heater method (called «dry zone») was applied. Even one pass of the zone decreased essentially Te inclusions (size and density) in the ingot. The p-type conductivity and others electrical characteristics of the material almost didn’t change, however the concentration of shallow (А ≈ 0.05 еV) acceptors reduced and the compensation degree of deeper acceptors (А ≈ 0.17 еV) increased. Such transformation of a defect-impurity system was manifested in decreasing of the ionized centers’ concentration and in reducing of impurities absorption coefficients both at 0.1-0.5 eV and near the edge of fundamental band. |
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