The Micro and Nano- defects Formation during Czochralski Growth

Authors	V.G. Kosushkin¹ , L.V. Kozhitov² , I.A. Kaplunov³
Affiliations	¹ Bauman Moscow State Technical University (Branch in Kaluga), 2, Bazhenov st., 248000 Kaluga, Russia ² National University of Science and Technology MISIS, 4, Leninskii pr., 119049 Moscow, Russia ³ Tver State University
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Issue	Volume 8, Year 2016, Number 3
Dates	Received 04 May 2016; published online 03 October 2016
Citation	V.G. Kosushkin, L.V. Kozhitov, I.A. Kaplunov, J. Nano- Electron. Phys. 8 No 3, 03054 (2016)
DOI	10.21272/jnep.8(3).03054
PACS Number(s)	61.72. – y, 61.72.Ff
Keywords	Single crystal, Structural defects (2) , Poligonisation in dislocation structure.
Annotation	The main idea was to determine the conditions of macro- and micro-defects formation in single crystals of large diameter grown by the Czochralski method. It was found that the value of the average density of dislocations in the crystal cannot be regarded as a definite criterion of origin or absence of the substructure. It was consider that the small-angle boundaries are the result polygonisation occurring mechanism slip or climb of dislocations in the crystal growth zone, closely related to the crystallization front. These boundaries can reach the solidification front, after which they inherited a growing crystal, forming macroblocks oriented along the growth axis.
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