Practical Analysis of the Properties of Nanoscale Electronic Elements Aimed at their Application when Designing Parallel Architecture Computing Systems

Authors M.V. Makarov

Murom Institute of Vladimir State University, 23, Orlovskaya st., 602264 Murom, Russia

Issue Volume 8, Year 2016, Number 3
Dates Received 22 April 2016; published online 03 October 2016
Citation M.V. Makarov, J. Nano- Electron. Phys. 8 No3, 03035 (2016)
DOI 10.21272/jnep.8(3).03023
PACS Number(s) 61.46. – w, 81.07. – b
Keywords Nanoscale electronics, Properties of nanomaterials, Memristors, Parallel computing (2) , Fault tolerance.
Annotation This article presents an approach to the practical analysis of nanomaterials which determine the reliability parameters of nanoscale electronic hardware components when they are used in developing fault-tolerant high-performance computing systems. We propose a methodology of theoretical and experimental study of the reliability values of the memristor models used as the synaptic connections of an artificial neural network that approximate a differential equation.

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